FRA801G thru FRA807G
8.0 AMPS. Glass Passivated Fast
Recovery Rectifiers
FEATURES
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
.055(1.40)
.045(1.14)
.113(2.87)
.103(2.62)
MECHANICAL DATA
Cases: TO-220AC Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260
C
/10 seconds .16”, (4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
o
PIN1
.16(4.06)
.14(3.56)
2
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Maximum Instantaneous Forward Voltage @ 8.0A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J=
25℃
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
o
Symbol
FRA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
,T
STG
801G
FRA
802G
FRA
803G
FRA
804G
FRA
805G
FRA
806G
FRA
807G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
50
35
50
100
70
100
200
140
200
400
280
400
8.0
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
50
3.0
-65 to +150
500
Notes:
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
09/18/2007 Rev.1.00
www.SiliconStandard.com
1
FRA801G thru FRA807G
RATINGS AND CHARACTERISTIC CURVES
(FRA801G THRU FRA807G)
10
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
100
FIG.2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT. (A)
8
40
INSTANTANEOUS REVERSE CURRENT. ( A)
6
Tj=125
0
C
10
4
2
4
2
1
Tj=75
0
C
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
0.4
0.2
PEAK FORWARD SURGE CURRENT. (A)
Tj=25
0
C
125
TJ=125
0
C
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
25
200
0
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
120
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
40
20
10
100
CAPACITANCE.(pF)
80
4
2
1
60
40
0.4
20
0.2
0.1
0.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
09/18/2007 Rev.1.00
www.SiliconStandard.com
2
FRA801G thru FRA807G
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
09/18/2007 Rev.1.00
www.SiliconStandard.com
3
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