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3KP30C-T3

Description
Trans Voltage Suppressor Diode, 3000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, P-600, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size216KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric View All

3KP30C-T3 Overview

Trans Voltage Suppressor Diode, 3000W, 30V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, P-600, 2 PIN

3KP30C-T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage42.2 V
Minimum breakdown voltage33.3 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation8 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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Min
Max
Min
Max
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In ,mm
1.000
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