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DB104

Description
1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size76KB,2 Pages
ManufacturerBytes
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DB104 Overview

1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

DB104 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage400 V
Maximum average input current1 A
Processing package descriptionPLASTIC, DB, 4 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current50 A
DB101
THRU
DB107
SINGLE PHASE 1.0 AMP BRIDGE RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
1.0 Ampere
FEATURES
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
plastic technique
* High surge current capability
* Polarity: marked on body
* Mounting position: Any
* Weight: 1.0 grams
+
DB-1
.255(6.5)
.245(6.2)
~
~
.350(8.9)
.300(7.6)
.365(9.3)
.355(9.0)
.135(3.4)
.115(2.9)
.020
(0.5)
.165(4.2)
.155(3.9)
.060
1.5
.205(5.2)
.195(5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=40 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per Bridge Element at 1.0A D.C.
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Operating Temperature Range, T
J
Storage Temperature Range, T
STG
Ta=125 C
DB101 DB102 DB103 DB104 DB105 DB106 DB107 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
50
1.1
10
500
-65 +125
-65 +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
µA
C
C
142

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DB104 DB105 DB106
Description 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
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