EEWORLDEEWORLDEEWORLD

Part Number

Search

DB106

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size23KB,2 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

DB106 Online Shopping

Suppliers Part Number Price MOQ In stock  
DB106 - - View Buy Now

DB106 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

DB106 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionR-PDIP-T4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Samacsys DescriptionBridge Rectifiers 1A 800V
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current40 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current0.00001 µA
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
DB101
THRU
DB107
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 50 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 1.0 gram
DB-1
FEATURES
* Epoxy : UL flammability classification 94V-0
* UL listed under the recognized component directory, file #E94233.
.255 (6.5)
.245 (6.2)
.350 (8.9)
.300 (7.6)
.335 (8.51)
.320 (8.12)
.135 (3.4)
.115 (2.9)
.165 (4.2)
.155 (3.9)
.060
(1.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.020
(0.5)
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
I
FSM
T
J,
T
STG
50
-65 to + 150
Amps
0
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Forward Voltage Drop per Bridge
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
SYMBOL
V
F
DB101
DB102
DB103
DB104
1.1
10.0
0.5
DB105
DB106
DB107
UNITS
Volts
uAmps
mAmps
1998-8
I
R

DB106 Related Products

DB106 DB105
Description 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Rectron Semiconductor Rectron Semiconductor
package instruction R-PDIP-T4 R-PDIP-T4
Contacts 4 4
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Samacsys Description Bridge Rectifiers 1A 800V Bridge Rectifiers 1A 600V
Other features UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 800 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V
JESD-30 code R-PDIP-T4 R-PDIP-T4
JESD-609 code e3 e3
Maximum non-repetitive peak forward current 40 A 40 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C
Maximum output current 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 265 265
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 600 V
Maximum reverse current 0.00001 µA 0.00001 µA
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

Recommended Resources

Popular Articles

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2383  165  1003  2891  1256  48  4  21  59  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号