ZXT849K
30V NPN LOW SATURATION TRANSISTOR IN D-PAK
SUMMARY
BV
CEO
= 30V : R
SAT
= 33m
DESCRIPTION
Packaged in the D-Pak outline this high current high performance 30V NPN
transistor offers low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.
typical; I
C
= 7A
FEATURES
•
7 amps continuous current
•
Up to 20 amps peak current
•
Low equivalent on resistance
•
Low saturation voltages
•
Excellent h
FE
performance up to 20 amps
DPAK
APPLICATIONS
•
DC - DC converters
•
DC - DC modules
•
Power switches
•
Motor control
•
Automotive circuits
PINOUT
ORDERING INFORMATION
DEVICE
ZXT849KTC
REEL
SIZE
13”
TAPE
WIDTH
16mm
QUANTITY PER
REEL
2500 units/reel
DEVICE MARKING
•
ZXT849
TOP VIEW
ISSUE 2 - DECEMBER 2003
1
SEMICONDUCTORS
ZXT849K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Power dissipation at T
A
=25°C
Linear derating factor
Linear derating factor
Power dissipation at T
A
=25°C
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
(c)
(a)
(b)
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CM
I
C
I
B
P
D
P
D
P
D
LIMIT
80
80
30
7
20
7
0.5
2.1
16.8
3.2
25.6
4.2
33.6
-55 to +150
UNIT
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
Power dissipation at T
A
=25°C
(b)
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
SYMBOL
R
JA
R
JA
R
JA
VALUE
59
39
30
UNIT
°C/W
°C/W
°C/W
NOTES
(a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions.
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
2
ZXT849K
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
3
SEMICONDUCTORS
ZXT849K
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
V
CE(SAT)
27
55
115
230
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
H
FE
100
100
100
40
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
* Measured under pulsed conditions. Pulse width
1.04
0.93
190
200
165
90
100
75
45
630
300 s; duty cycle
2%.
300
MIN.
80
80
30
7
TYP.
125
125
40
8
20
20
10
40
80
180
280
1.15
1.1
MAX. UNIT CONDITIONS
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
I
C
=100 A
I
C
=1 A, R
BE
= 1k
I
C
=10mA*
I
E
=100 A
V
CB
=70V
V
CB
=70V, R
BE
= 1k
V
EB
=6V
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=7A, I
B
=350mA*
I
C
=7A, I
B
=350mA*
I
C
=7A, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
MHz I
C
=100mA, V
CE
=10V
f=50MHz
pF
nS
nS
V
CB
=10V, f=1MHz*
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ISSUE 2 - DECEMBER 2003
SEMICONDUCTORS
4
ZXT849K
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2003
5
SEMICONDUCTORS
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