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DCG015

Description
0.1 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size36KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

DCG015 Overview

0.1 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

DCG015 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSANYO
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresFAST SWITCHES
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Ordering number:EN2820A
DCG015
Silicon Epitaxial Planar Type (Cathode Common)
High-Speed Switching Diode
Features
· Very small-sized package permitting DCG015-
applied sets to be made small and slim.
· Fast swicthing speed.
· Twin type, anode common.
Package Dimensions
unit:mm
1198
[DCG015]
A:Anode
C:Cathode
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Reverse Voltage
Surge Current
Average Rectified Current
Peak Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
VR
IFSM
IO
IFM
Tj
Tstg
1µs
Unit rating
Total rating
Unit rating
Total rating
Conditions
SANYO:MCP
Ratings
75
50
4
100
150
300
450
150
–55 to +150
Unit
V
V
A
mA
mA
mA
mA
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Forward Voltage
Symbol
VF
IF=10mA
IF=50mA
IF=100mA
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
IR
C
trr
VR=50V
VR=0V, f=1MHz
IF=10mA, VR=6V, RL=50
, Irr=0.1Irp
4.0
Conditions
Ratings
min
typ
0.72
0.85
0.92
max
1.0
1.0
1.2
100
7.0
5
Unit
V
V
V
nA
pF
ns
Marking:A6
Reverse Recovery Time Test Circuit
Electrical Connection
(Top view)
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4059MO (KOTO) No.2820-1/2

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