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FA4L4K-L-A

Description
PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size411KB,22 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

FA4L4K-L-A Overview

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-59

FA4L4K-L-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Reach Compliance Codecompliant
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)35
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
SILICON TRANSISTOR
FA4xxx
RESISTOR BUILT-IN TYPE NPN TRANSISTOR
FEATURES
Resistors built-in type
Complementary to FN4xxx
2.8 ± 0.2
0.65
–0.15
+0.1
PACKAGE DRAWING (Unit: mm)
Compact package
0.4
+0.1
–0.05
0.16
–0.06
Marking
3
0 to 0.1
+0.1
ORDERING INFORMATION
PART NUMBER
FA4xxx
PACKAGE
SC-59
1.5
2
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
Collector to Emitter Voltage
<R>
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Total Power Dissipation
Junction Temperature
Storage Temperature
<R>
Note 1.
PART NUMBER
Note2
0.4
+0.1
–0.05
0.3
0.95
0.95
1.1 to 1.4
V
CBO
V
CEO
V
EBO
I
C
I
C(pulse)
P
T
T
j
T
stg
60
50
Note1
V
V
V
A
A
W
°C
°C
2
R
1
2.9 ± 0.2
EQUIVALENT CIRCUIT
3
PIN CONNECTION
1: Emitter
2: Base
3: Collector
0.1
0.2
0.2
150
–55 to +150
R
2
1
V
EBO
(V)
10
10
10
10
5
5
5
5
5
MARK
R
1
(kΩ)
R
2
(kΩ)
10.0
22.0
47.0
4.7
10.0
PART NUMBER
V
EBO
(V)
15
5
5
5
10
5
5
15
25
MARK
R
1
(kΩ)
R
2
(kΩ)
22.0
FA4A4M
FA4F4M
FA4L4M
FA4L3M
FA4L3N
FA4L3Z
FA4A3Q
FA4A4P
FA4F4N
AA1
AB1
AC1
AD1
AE1
AF1
AG1
AH1
AJ1
10.0
22.0
47.0
4.7
4.7
4.7
1.0
10.0
22.0
FA4L4L
FA4A4Z
FA4F4Z
FA4L4Z
FA4F3M
FA4F3P
AK1
AL1
AM1
AN1
AP1
AQ1
AR1
AS1
AT1
47.0
10.0
22.0
47.0
2.2
2.2
2.2
10.0
47.0
2.2
10.0
47.0
4.7
10.0
10.0
47.0
47.0
FA4F3R
FA4A4L
FA4L4K
Note 2.
PW
10 ms, Duty Cycle
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16493EJ3V0DS00 (3rd edition)
Date Published December 2005 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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