DCR1008SF
DCR1008SF
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4244-3.0
DS4244-4.0 July 2001
FEATURES
s
Double Side Cooling
s
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
3600V
1051A
15000A
1000V/
µ
s
200A/
µ
s
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
3600
3500
3400
3300
3200
Conditions
DCR1008SF36
DCR1008SF35
DCR1008SF34
DCR1008SF33
DCR1008SF32
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 150mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR1008SF35
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
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DCR1008SF
CURRENT RATINGS
T
case
= 60˚C unless state dotherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1051
1650
1508
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
753
1182
1018
A
A
A
CURRENT RATINGS
T
case
= 60˚C unless state dotherwise.
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
830
1300
1160
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
565
890
770
A
A
A
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DCR1008SF
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
12.0
0.72 x 10
6
15.0
1.125 x 10
6
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 19.5kN
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
–55
18.0
125
125
22.0
o
Min.
dc
Anode dc
-
-
-
-
-
-
Max.
0.022
0.038
0.052
0.004
0.008
135
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
Double side
Single side
o
R
th(c-h)
Thermal resistance - case to heatsink
o
C
C
C
o
kN
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DCR1008SF
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
Parameter
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 67% V
DRM
T
j
= 125
o
C.
From 67% V
DRM
, I
T
= 1500A, Repetitive 50Hz
Gate source1.5A
t
r
≤
0.5µs. T
j
= 125
o
C.
Non-repetitive
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 67% V
DRM
, Gate source 30V, 15Ω
Rise time 0.5µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 5V
T
j
= 25
o
C, R
g-k
=
∞
Typ.
-
-
-
-
-
-
-
350
230
Max.
150
1000
75
200
1.1
0.57
2.0
900
600
Units
mA
V/µs
A/µs
A/µs
V
mΩ
µs
mA
mA
µs
dI/dt
Rate of rise of on-state current
V
T(TO)
r
T
t
gd
I
L
I
H
t
q
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
I
T
= 3000A, t
p
= 1ms, T
j
= 125˚C,
Turn-off time
V
RM
= 900V, dI
RR
/dt = 5A/µs,
V
DR
= 2800V, dV
DR
/dt = 20V/µs linear
-
500
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
See table. fig. 4
Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
Max.
3.5
200
0.25
30
0.25
5
30
150
10
Units
V
mA
V
V
V
V
A
W
W
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DCR1008SF
CURVES
4000
Measured under pulse conditions
3500
6 phase
3000
3 phase
Half wave
d.c.
Instantaneous on-state current, I
T
- (A)
3000
Mean power dissipation - (W)
2500
2000
2000
T
j
= 125˚C
1500
1000
1000
500
0
1.0
2.0
3.0
Instantaneous on-state voltage, V
T
- (V)
4.0
00
400
800
1200
Mean on-state current, I
T(AV)
- (A)
1600
Fig.2 Maximum (limit) on-state characteristics
V
TM
Equation:-
V
TM
= A + Bln (I
T
) + C.I
T
+D.√I
T
Where
A = 1.458475
B = –0.098355
C = 0.000484
D = 0.012565
these values are valid for T
j
= 125˚C for I
T
500A to 4000A
Fig.3 Dissipation curves
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