PNP Silicon Transistors
with High Reverse Voltage
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Low capacitance
q
Complementary types: BFP 22, BFP 25 (NPN)
q
1
3 2
BFP 23
BFP 26
Type
BFP 23
BFP 26
Marking
–
Ordering Code
(tape and reel)
Q62702-F622
Q62702-F722
Pin Configuration
1
2
3
E
B
C
Package
1)
TO-92
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
C
= 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case
2)
R
th JA
R
th JC
≤
≤
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
BFP 26
BFP 23
200
200
6
200
500
100
200
625
150
– 65 … + 150
300
300
Unit
V
mA
mW
˚C
200
135
K/W
1)
2)
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm
×
25 mm
×
0.5 mm.
BFP 23
BFP 26
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
BFP 23
I
C
= 1 mA
BFP 26
Collector-base breakdown voltage
BFP 23
I
C
= 100
µ
A
BFP 26
Emitter-base breakdown voltage
I
E
= 100
µ
A
Collector-base cutoff current
V
CB
= 160 V
V
CB
= 250 V
V
CB
= 160 V,
T
A
= 150 ˚C
V
CB
= 250 V,
T
A
= 150 ˚C
Emitter-base cutoff current
V
EB
= 3 V
DC current gain
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
1)
I
C
= 30 mA,
V
CE
= 10 V
1)
BFP 23
BFP 26
BFP 23
BFP 26
I
EB0
h
FE
25
40
30
25
V
CEsat
–
–
V
BEsat
–
–
–
–
0.4
0.5
0.9
–
–
–
–
–
–
–
–
V
V
(BR)CE0
200
300
V
(BR)CB0
200
300
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
nA
nA
µ
A
µ
A
nA
–
6
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
BFP 23
BFP 26
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
BFP 23
BFP 26
Base-emitter saturation voltage
1)
I
C
= 20 A,
I
B
= 2 mA
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 20 MHz
Output capacitance
V
CB
= 30 V,
f
= 1 MHz
f
T
C
obo
–
–
70
1.5
–
–
MHz
pF
1)
Pulse test conditions:
t
≤
300
µ
s,
D
≤
2 %.
MEMS sensors
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