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CEK01N6

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size48KB,5 Pages
ManufacturerChino-Excel
Download Datasheet Parametric View All

CEK01N6 Overview

Transistor

CEK01N6 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
CEK01N6
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V , 0.25A , R
DS(ON)
=7.5
@V
GS
=10V.
Super high dense cell design for low R
DS(ON)
.
High power and current handling capability.
TO-92 Package.
TO-92
D
G
G
DS
S
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
600
30
0.25
1
0.25
1.5
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
R
JA
85
C/W
1
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