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BSP613PH6327

Description
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
CategoryDiscrete semiconductor    The transistor   
File Size378KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSP613PH6327 Overview

Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP613PH6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)150 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2.9 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)11.6 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
BSP613P
SIPMOS
®
Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Avalanche rated
dv/dt rated
Ideal for fast switching buck converter
Qualified according to AEC Q101
Halogen­free according to IE C 61249­2­21
Gate
pin1
Source
pin 3
Drain
pin 2,4
Product Summary
V
DS
R
DS(on)
I
D
-60
0.13
-2.9
PG-SOT223
V
A
Type
BSP613P
Package
PG-SOT223
Tape and reel
Packaging
Marking
BSP613P
H6327:
1000pcs/r.
Non  D
ry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
-2.9
-2.3
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
-11.6
150
0.18
6
±20
1.8
-55... +150
55/150/56
Avalanche energy, single pulse
I
D
=2.9 A ,
V
DD
=-25V,
R
GS
=25Ω
mJ
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
=2.9A,
V
DS
=-48V, di/dt=-200A/µs,
T
jmax
=150°C
kV/µs
V
W
°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev.2.8
Page 1
Class 1c
2016-05-30

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