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DF02S

Description
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size138KB,2 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
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DF02S Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

CE
CHENYI ELECTRONICS
DF005S THRU DF10S
SINGLE PHASE GLASS
PASSIVATED SURFACE MOUNT BRIDGE RECTIFIER
Voltage: 50 TO 1000V CURRENT:1.0A
FEATURES
For surface mount application
Reliable low cost construction utilizing molded plastic
technique
Surge overload rating: 50A peak
MECHANICAL DATA
.
Terminal:
Plated leads solderable per
MIL-STD 202E, method 208C
.
Case:
UL-94 Class V-0 recognized Flame Retardant Epoxy
.
Polarity:
Polarity symbol marked on body
.
Mounting position:
any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60HZ, resistive or inductive load rating at 25
for capacitive load, derate current by 20%)
SYMBOL DF005S
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
current at Ta=40
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
forward current 1.0A
Maximum DC Reverse Voltage Ta=25
at rated DC blocking voltage Ta=125
Typical Junction Capacitance
Operating Temperature Range
Storage and operation Junction Temperature
Note:
1. Measure at 1MHZ and applied reverse voltage of 4.0 volt
Ir
Cj
Tj
Tstg
Vf
1.1
10.0
500
25
-55 to +125
-55 to +150
V
A
mA
pF
Ifsm
50
A
If(av)
1
A
Vrrm
Vrms
Vdc
50
35
50
DF01S
100
70
100
DF02S
200
140
200
DF04S
400
280
400
DF06S
600
420
600
DF08S
800
560
800
DF10S
1000
700
1000
units
v
v
v
, unless otherwise stated,
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 2

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