FK10KM-10 datasheet, PDF - EEWORLD Datasheet

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FK10KM-10: DescriptionPower Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，1 Pages; ManufacturerPOWEREX; Websitehttp://www.pwrx.com/Home.aspx

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FK10KM-10 Overview

Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN

FK10KM-10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	POWEREX
Parts packaging code	TO-220FN
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	1.13 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	35 W
Maximum power dissipation(Abs)	35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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FK10KM-10 Related Products

	FK10KM-10	FK20SM-5
Description	Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FN, 3 PIN	Power Field-Effect Transistor, 20A I(D), 250V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Is it Rohs certified?	incompatible	incompatible
Maker	POWEREX	POWEREX
Parts packaging code	TO-220FN	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
Shell connection	ISOLATED	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	250 V
Maximum drain current (Abs) (ID)	10 A	20 A
Maximum drain current (ID)	10 A	20 A
Maximum drain-source on-resistance	1.13 Ω	0.25 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	35 W	150 W
Maximum power dissipation(Abs)	35 W	150 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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