BP1L3N-A datasheet, PDF - EEWORLD Datasheet

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BP1L3N-A: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size114KB，6 Pages; ManufacturerNEC Electronics

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BP1L3N-A Overview

Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

BP1L3N-A Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 2.13
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

COMPOUND TRANSISTOR

BP1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

The BP1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing

of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA

equipments such as VCRs and TVs.

FEATURES

• Up to 0.7 A current drive available

• On-chip bias resistor

• Low power consumption during drive

PACKAGE DRAWING (UNIT: mm)

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor

Devices” (Document No. C11531E) published by NEC Corporation

to know the specification of quality grade on the devices and its

recommended applications.

BP1 SERIES LISTS

Products

BP1A4A

BP1L2Q

BP1A3M

BP1F3P

BP1J3P

BP1L3N

BP1A4M

(KΩ)

−

0.47

1.0

2.2

3.3

4.7

(KΩ)

4.7

1.0

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D11740EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

BP1L3N-A Related Products

	BP1L3N-A	BP1A4M-A	BP1J3P-A	BP1A4A-A	BP1L2Q-A	BP1F3P-A	BP1A3M-A
Description	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.7A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
Maker	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 2.13	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 3.03	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR RATIO IS 10	BUILT IN BIAS RESISTOR RATIO IS 4.55	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
Collector-emitter maximum voltage	25 V	25 V	25 V	25 V	25 V	25 V	25 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50	50	50	50	50	50	50
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1	1

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