KSB546
KSB546
TV Vertical Deflection Output
•
•
•
•
Collector-Base Voltage : V
CBO
= -200V
Collector Current : l
C
= -2A
Collector Dissipation : P
C
= 25W (T
C
=25°C)
Complement to KSD401
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)Y
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 200
- 150
-5
-2
25
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 500µA, I
E
= 0
I
C
= - 10mA, I
B
= 0
I
E
= - 500uA, I
C
= 0
V
CB
= - 150V, I
E
= 0
V
CE
= - 10V, I
E
= - 0.4A
I
C
= - 500mA, I
B
= - 50mA
V
CE
= - 10V, I
C
= - 0.4A
5
40
Min.
- 200
- 150
-5
- 50
240
-1
V
MHz
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB546
Typical Characteristics
-1.0
-0.9
1000
V
CE
= -10V
I
C
[A], COLLECTOR CURRENT
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
-0.0
-0
I
B
= -8mA
I
B
= -6mA
I
B
= -5mA
I
B
= -4mA
I
B
= -3mA
I
B
= -2mA
I
B
= -1mA
h
FE
, DC CURRENT GAIN
I
B
= -7mA
100
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
10
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
1000
I
C
= 10 I
B
f=1MHz
I
E
=0
-1
V
BE
(sat)
C
ob
[pF], CAPACITANCE
-1
-10
100
V
CE
(sat)
-0.1
-0.01
-0.01
10
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-10
40
I
C
[A], COLLECTOR CURRENT
*1ms
P
C
[W], POWER DISSIPATION
1. Tc=25℃
2. *single pulse
35
30
25
Thermal limitation
-1
S/B limitation
20
15
10
S/B limitation
5
-0.1
-10
-100
0
0
25
o
50
75
100
125
150
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS™
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®
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DISCLAIMER
HiSeC™
ISOPLANAR™
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POP™
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®
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Quiet Series™
SuperSOT™-3
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SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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