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TN5325N3-G P014

Description
mosfet N-CH enhancmnt mode mosfet
Categorysemiconductor    Discrete semiconductor   
File Size517KB,6 Pages
ManufacturerSupertex
Environmental Compliance
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TN5325N3-G P014 Overview

mosfet N-CH enhancmnt mode mosfet

TN5325
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance and high gain
Free from secondary breakdown
Low C
ISS
and fast switching speeds
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN5325
Package Options
TO-236AB (SOT-23)
TN5325K1-G
TO-92
TN5325N3-G
TO-243AA (SOT-89)
TN5325N8-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
250
7.0
1.2
2.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
O
DRAIN
Value
BV
DSS
BV
DGS
±20V
-55 C to +150 C
O
GATE
DRAIN
SOURCE
SOURCE
TO-236AB (SOT-23) (K1)
DRAIN
TO-92 (N3)
GATE
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
GATE
SOURCE
DRAIN
TO-243AA (SOT-89) (N8)
SiTN
5325
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Product Marking
N3CW
W = Code for week sealed
= “Green” Packaging
TN3CW
W = Code for week sealed
= “Green” Packaging
TO-236AB (SOT-23) (K1)
TO-92 (N3)
TO-243AA (SOT-89) (N8)
Packages may or may not include the following marks: Si or
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

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