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HZU12B3

Description
12 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
CategoryDiscrete semiconductor    diode   
File Size92KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HZU12B3 Overview

12 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

HZU12B3 Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeSC-76A
package instructionULTRA SMALL, PLASTIC, URP, SC-76A, 2 PIN
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance35 Ω
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage12 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance2.11%
Working test current5 mA
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
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