FQD5N60C / FQU5N60C — N-Channel QFET
®
MOSFET
November 2013
FQD5N60C / FQU5N60C
N-Channel QFET
®
MOSFET
600 V, 2.8 A, 2.5
Ω
Features
• 2.8 A, 600 V, R
DS(on)
= 2.5
Ω
(Max.) @ V
GS
= 10 V, I
D
= 1.4 A
• Low Gate Charge ( Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS compliant
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
D-PAK
I-PAK
G
D
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted.
FQD5N60CTM / FQU5N60CTU
600
2.8
1.8
(Note 1)
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
11.2
±
30
210
2.8
4.9
4.5
2.5
49
0.39
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction-to-Ambient (* 1 in
2
pad of 2 oz copper), Max.
1
FQD5N60CTM /
FQU5N60CTU
2.56
110
50
Unit
°C/W
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C1
FQD5N60C / FQU5N60C — N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Device Marking
FQD5N60C
FQU5N60C
Device
FQD5N60CTM
FQU5N60CTU
Package
D-PAK
I-PAK
Reel Size
330 mm
Tube
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted.
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
DSS
ΔBV
DSS
/
ΔT
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
μA
I
D
= 250
μA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
0.6
--
--
--
--
--
--
1
10
100
-100
V
V/°C
μA
μA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 1.4 A
V
DS
= 40 V, I
D
= 1.4 A
2.0
--
--
--
2.0
4.7
4.0
2.5
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
515
55
6.5
670
72
8.5
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480 V, I
D
= 4.5A,
V
GS
= 10 V
(Note 4)
V
DD
= 300 V, I
D
= 4.5A,
R
G
= 25
Ω
(Note 4)
--
--
--
--
--
--
--
10
42
38
46
15
2.5
6.6
30
90
85
100
19
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 18.9mH, I
AS
= 4.5 A, V
DD
= 50V, R
G
= 25
Ω,
starting T
J
= 25°C.
3. I
SD
≤
4.5A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS,
starting T
J
= 25°C.
4. Essentially independent of operating temperature.
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 2.8 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 4.5 A,
dI
F
/ dt = 100 A/μs
--
--
--
--
--
--
--
--
300
2.2
2.8
11.2
1.4
--
--
A
A
V
ns
μC
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C1
2
www.fairchildsemi.com
FQD5N60C / FQU5N60C — N-Channel QFET
®
MOSFET
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
0
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Top :
10
1
150 C
-55 C
10
0
o
o
25 C
o
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
10
-2
10
-1
-1
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
4
V
GS
= 10V
3
I
DR
, Reverse Drain Current [A]
5
10
1
10
0
2
V
GS
= 20V
1
※
Note : T
J
= 25
℃
150
℃
25
℃
10
-1
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
V
GS
, Gate-Source Voltage [V]
800
10
V
DS
= 120V
V
DS
= 300V
C
iss
Capacitance [pF]
8
600
V
DS
= 480V
C
oss
400
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4
200
C
rss
2
※
Note : I
D
= 4.5A
0
-1
10
0
10
0
10
1
0
4
8
12
16
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C1
3
www.fairchildsemi.com
FQD5N60C / FQU5N60C — N-Channel QFET
®
MOSFET
Typical Characteristics
(Continued)
1.2
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 1.4 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
3.0
Operation in This Area
is Limited by R
DS(on)
10
1
2.5
10
μ
s
I
D
, Drain Current [A]
I
D
, Drain Current [A]
3
100
μ
s
1 ms
10 ms
100 ms
DC
2.0
10
0
1.5
1.0
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0.5
10
-2
10
0
10
1
10
2
10
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Z
θJC
(t), Thermal Response [
o
C/W]
Z
θ
JC
(t), Thermal Response
10
0
D = 0 .5
0 .2
0 .1
0 .0 5
※
N o te s :
1 . Z
θ
J C
(t) = 2 .5 6
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
P
DM
t
1
t
2
10
-1
0 .0 2
0 .0 1
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C1
4
www.fairchildsemi.com
FQD5N60C / FQU5N60C — N-Channel QFET
®
MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
I
G
= const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
R
L
V
DD
V
DS
V
DS
R
G
V
GS
10V
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
GS
10V
GS
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
©2003 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C1
5
www.fairchildsemi.com
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