Freescale Semiconductor
Technical Data
Document Number: MMG15241H
Rev. 1, 4/2011
Enhancement Mode pHEMT
Technology (E-
-pHEMT)
High Linearity Amplifier
The MMG15241H is a high dynamic range, low noise amplifier MMIC, housed
in a SOT -- 89 standard plastic package. It is ideal for Cellular, PCS, LTE,
TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the
500 to 2800 MHz frequency range. With high OIP3 and low noise figure, it can
be utilized as a driver amplifier in the transmit chain and as a second stage LNA
in the receive chain
.
Features
•
Frequency: 500--2800 MHz
•
Noise Figure: 1.6 dB @ 2140 MHz
•
P1dB: 24 dBm @ 2140 MHz
•
Small--Signal Gain: 15.9 dB @ 2140 MHz
•
Third Order Output Intercept Point: 39.4 dBm @ 2140 MHz
•
Single 5 Volt Supply
•
Supply Current: 85 mA
•
50 Ohm Operation (some external matching required)
•
Low Cost SOT--89 Surface Mount Package
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical Performance
(1)
Characteristic
Noise Figure
Input Return Loss
(S11)
Output Return Loss
(S22)
Small--Signal Gain
(S21)
Power Output @
1dB Compression
Third Order Input
Intercept Point
Third Order Output
Intercept Point
Symbol
NF
IRL
ORL
G
p
P1db
IIP3
OIP3
900
MHz
1.2
--11.8
--13.4
20.5
24
18.2
38.7
2140
MHz
1.6
--21.3
--16.2
15.9
24
23.5
39.4
2600
MHz
1.3
--16.9
--20.9
14.4
24
26.2
40.6
Unit
dB
dB
dB
dB
dBm
dBm
dBm
MMG15241HT1
500-
-2800 MHz, 15.9 dB
24 dBm
E-
-pHEMT
CASE 2142-
-01
SOT-
-89
PLASTIC
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
(2)
Symbol
V
DD
I
DD
P
in
T
stg
T
J
Value
6
130
23
--65 to +150
150
Unit
V
mA
dBm
°C
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. V
DD
= 5 Vdc, T
A
= 25°C, 50 ohm system, application circuit tuned
for specified frequency.
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 5 Vdc, 84 mA, no RF applied
Symbol
R
θJC
Value
(3)
59
Unit
°C/W
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
MMG15241HT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(V
DD
= 5 Vdc, 2140 MHz, T
A
= 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Power Output @ 1dB Compression
Third Order Input Intercept Point
Third Order Output Intercept Point
Reverse Isolation (S12)
Noise Figure
Supply Current
(1)
Supply Voltage
(1)
Symbol
G
p
IRL
ORL
P1dB
IIP3
OIP3
|S12|
NF
I
DD
V
DD
Min
14
—
—
—
—
—
—
—
65
—
Typ
15.9
--21.3
--16.2
24
23.5
39.4
--22.5
1.6
85
5
Max
—
—
—
—
—
—
—
—
105
—
Unit
dB
dB
dB
dBm
dBm
dBm
dB
dB
mA
V
1. For reliable operation, the junction temperature should not exceed 150°C.
Table 5. Functional Pin Description
Pin
Number
1
2
3
RF
in
Ground
RF
out
/DC Supply
1
2
3
Pin Function
2
Figure 1. Functional Diagram
Table 6. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD 22--A114)
Machine Model (per EIA/JESD 22--A115)
Charge Device Model (per JESD 22--C101)
Class
2 (Minimum)
B (Minimum)
IV (Minimum)
Table 7. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
1
Package Peak Temperature
260
Unit
°C
MMG15241HT1
2
RF Device Data
Freescale Semiconductor
50 OHM TYPICAL CHARACTERISTICS
25
G
p
, SMALL--SIGNAL GAIN (dB)
T
C
= 25°C
21
--40°C
17
85°C
S11, S22 (dB)
--10
S22
--20
V
DD
= 5 Vdc
0
0.5
1
1.5
2
2.5
3
V
DD
= 5 Vdc
0
0.5
1
1.5
2
2.5
3
0
S11
10
13
9
--30
f, FREQUENCY (GHz)
f, FREQUENCY (GHz)
Figure 2. Small-
-Signal Gain (S21) versus
Frequency
(1)
Figure 3. Input/Output Return Loss versus
Frequency
(1)
1. Test fixture characteristics have been mathematically removed from the graphical data.
MMG15241HT1
RF Device Data
Freescale Semiconductor
3
50 OHM APPLICATION CIRCUIT: 2140 MHz
V
SUPPLY
C5
Z4
C4
RF
INPUT
C2
C1
Z1
Z2
Z3
DUT
Z5
Z6
L1
Z7
C3 C6
RF
OUTPUT
Z1
Z2
Z3
Z4
0.026″ x 0.021″ Microstrip
0.168″ x 0.021″ Microstrip
0.030″ x 0.044″ Microstrip
0.200″ x 0.042″ Microstrip
Z5
Z6
Z7
0.030″ x 0.044″ Microstrip
0.172″ x 0.021″ Microstrip
0.353″ x 0.021″ Microstrip
Figure 4. MMG15241HT1 Test Circuit Schematic
Table 8. MMG15241HT1 Test Circuit Component Designations and Values
Part
C1
C2
C3
C4
C5
C6
L1
PCB
Description
1.5 pF Chip Capacitor
0.8 pF Chip Capacitor
0.7 pF Chip Capacitor
56 pF Chip Capacitor
0.1
μF
Chip Capacitor
5.6 pF Chip Capacitor
30 nH Chip Inductor
0.010″,
ε
r
= 3.38, Multilayer
Part Number
GJM1555C1H1R5CB01D
GJM1555C1HR80BB01D
GJM1555C1HR70BB01D
GRM188RC1H560GA01D
GRM188R71H104KA93D
GJM1555C1H5R6DB01D
0603CS--30NXJLW
IS680--338
Manufacturer
Murata
Murata
Murata
Murata
Murata
Murata
Coilcraft
Isola
MMG15241HT1
4
RF Device Data
Freescale Semiconductor
50 OHM APPLICATION CIRCUIT: 2140 MHz
RF
IN
RF
OUT
C1
C6
C2
C3
L1
C4
C5
SOT--89--3B
Rev. 0
V
DD
Figure 5. MMG15241HT1 Test Circuit Component Layout
Table 8. MMG15241HT1 Test Circuit Component Designations and Values
Part
C1
C2
C3
C4
C5
C6
L1
PCB
Description
1.5 pF Chip Capacitor
0.8 pF Chip Capacitor
0.7 pF Chip Capacitor
56 pF Chip Capacitor
0.1
μF
Chip Capacitor
5.6 pF Chip Capacitor
30 nH Chip Inductor
0.010″,
ε
r
= 3.38, Multilayer
Part Number
GJM1555C1H1R5CB01D
GJM1555C1HR80BB01D
GJM1555C1HR70BB01D
GRM188RC1H560GA01D
GRM188R71H104KA93D
GJM1555C1H5R6DB01D
0603CS--30NXJLW
IS680--338
Manufacturer
Murata
Murata
Murata
Murata
Murata
Murata
Coilcraft
Isola
(Component Designations and Values table repeated for reference.)
MMG15241HT1
RF Device Data
Freescale Semiconductor
5
Power technology
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