2N3057A
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3057AJ)
•
JANTX level (2N3057AJX)
•
JANTXV level (2N3057AJV)
•
JANS level (2N3057AJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 37.5
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
80
140
7
1
0.5
3.08
1.8
10.3
325
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3057A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 0.1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 500 mA, V
CE
= 10 Volts
I
C
= 1 A, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
T
A
= -55°C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Symbol
V
(BR)CEO
I
CBO1
I
CES1
I
CES2
I
EBO1
I
EBO2
Test Conditions
I
C
= 30 mA
V
CB
= 140 Volts
V
CE
= 90 Volts
V
CE
= 90 Volts, T
A
= 150°C
V
EB
= 7 Volts
V
EB
= 5 Volts
Min
80
10
10
10
10
10
Typ
Max
Units
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
100
50
90
50
15
40
Typ
Max
300
200
200
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Collector Base time constant
Noise Figure
Switching Characteristics
Saturated Turn-On Time
1.1
0.2
0.5
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
C
IBO
r
b
’C
C
NF
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
V
CE
= 5 Volts, I
C
= 1 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
V
CB
= 10 Volts, I
E
= 10 mA,
f = 79.8 MHz
V
CE
= 10 Volts, I
C
= 100
µA,
f = 200 Hz, R
g
= 1 kΩ
Min
5
80
Typ
Max
20
400
12
60
400
4
Units
pF
pF
ps
dB
t
ON
+t
OFF
30
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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