This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
•
–3.3 A, –20V R
DS(ON)
= 125 mΩ @ V
GS
= –10 V
R
DS(ON)
= 200 mΩ @ V
GS
= –4.5 V
•
V
F
< 0.39 V @ 1 A (T
J
= 125°C)
V
F
< 0.47 V @ 1 A
V
F
< 0.58 V @ 2 A
•
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
•
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
C
C
D
A
1
A
2
G
8
C
7
C
6
D
5
D
S
3
G
4
SO-8
Pin 1
S
A
A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–
20
±20
(Note 1a)
Units
V
V
A
W
–
3.3
–
10
2
1.6
1
0.9
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
V
RRM
I
O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
–
55 to +150
20
1
°C
V
A
Package Marking and Ordering Information
Device Marking
FDFS2P102A
Device
FDFS2P102A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor Corporation
FDFS2P102A Rev A1(W)
FDFS2P102A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
DS
= –16 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
–20
Typ
Max Units
V
Off Characteristics
–23
–1
100
–100
–1
–1.8
4.4
96
152
137
–10
4.6
182
60
24
5
14
11
2
V
DS
= –10 V,
V
GS
= –5 V
I
D
= –3.3 A,
2.1
1.0
0.6
–1.3
(Note 2)
mV/°C
µA
nA
nA
V
mV/°C
125
200
190
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
, I
D
= –250
µA
I
D
= –250
µA,Referenced
to 25°C
V
GS
= –10 V,
I
D
= –3.3 A
V
GS
= –4.5 V, I
D
= –2.5 A
V
GS
=–10 V, I
D
=–3.3A, T
J
=125°C
V
GS
= –10 V, V
DS
= –5 V
V
DS
= –5V, I
D
= –3.3 A
–3
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
I
R
V
F
A
S
pF
pF
pF
10
52
20
4
3.0
ns
ns
ns
ns
nC
nC
nC
A
V
µA
mA
V
Dynamic Characteristics
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Reverse Leakage
Forward Voltage
V
GS
= 0 V,
V
R
= 20 V
I
F
= 1 A
I
F
= 2 A
I
S
= –1.3 A
–0.8
–1.2
50
18
0.47
0.39
0.58
0.53
Schottky Diode Characteristics
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
FDFS2P102A Rev A1(W)
FDFS2P102A
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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