BCR400W
Active Bias Controller
Characteristics
•
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
•
Low voltage drop of 0.7V
Application notes
•
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
•
Ideal supplement for Sieget and other transistors
•
also usable as current source up to 5mA
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
1
2
EHA07188
3
4
1
2
4
3
Type
BCR400W
Marking
Pin Configuration
W4s
1=GND/E
NPN
2=Contr/B
NPN
3V
S
Package
4=Rext/C
NPN
SOT343
(E
NPN
, B
NPN
, C
NPN
are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation,
T
S
= 117 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
2)
R
thJS
≤
100
Symbol
V
S
I
Contr.
V
Contr.
V
R
P
tot
T
j
T
stg
Value
18
10
16
0.5
330
150
-65 ... 150
Unit
V
mA
V
mW
°C
K/W
1Pb-containing package may be available upon special request
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
2007-05-29
BCR400W
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
DC Characteristics
Additional current consumption
V
S
= 3 V
Lowest stabilizing current
V
S
= 3 V
DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage
I
B
(NPN) < 0.5mA
Voltage drop
(V
S
-
V
CE
)
I
C
= 25 mA
Change of
I
C
versus
h
FE
h
FE
= 50
Change of
I
C
versus
V
S
V
S
= 3 V
Change of
I
C
versus
T
A
∆I
C
/I
C
∆I
C
/I
C
∆I
C
/I
C
-
-
-
0.08
0.15
0.2
-
-
-
∆h
FE
/
h
FE
∆V
S
/V
S
Symbol
min.
I
0
I
min
-
-
Values
typ.
20
0.1
max.
40
-
Unit
µA
mA
V
Smin
V
drop
-
-
1.6
0.65
-
-
V
%/K
2
2007-05-29
BCR400W
Collector current
I
C
=
f
(h
FE
)
I
C
and
h
FE
refer to stabilized NPN Transistor
Parameter
R
ext.
(Ω)
10
3
mA
Collector Current
I
C
=
f
(V
S
)
of stabilized NPN Transistor
Parameter
R
ext.
(Ω)
10
3
mA
2.1
5.9
10
2
5.9
10
2
12.4
I
C
I
C
67
10
1
67
10
1
760
10
0
760
10
0
4.3k
10
-1
0
50
100
150
200
250
-
350
10
-1
0
2
4
6
8
V
11
h
FE
V
S
Voltage drop
V
drop
=
f
(I
C
)
Collector current
I
C
=
f
(R
ext.
)
of stabilized NPN Transistor
10
3
mA
V
2
1.7
1.6
10
2
V
drop
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-2
10
10
-1
I
C
10
1
10
0
0
1
2
10
10
10
mA
10
3
10
-1 0
10
10
1
10
2
10
3
Ohm
10
4
I
C
R
ext.
3
2007-05-29
BCR400W
Collector current
T
A
=
f
(I
C
)
of stabilized NPN Transistor
Parameter:
R
ext.
(Ω)
10
3
mA
2.2
Control current
I
=
f
(R
ext.
)
in current source application
10
1
10
2
6
mA
I
C
26
10
1
65
I
Contr.
10
0
10
-1 -1
10
290
10
0
760
4.3k
10
-1
-40 -20
0
20
40
60
80 100 120
°C
160
10
0
10
1
10
2
KOhm
3
10
T
A
R
ext.
Control current
I
=
f
(T
A
)
in current source application
Control current
I
=
f
(V
S
)
in current source application
1.5
mA
2.2
mA
1.2
1.8
I
Contr.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-20
0
20
40
60
80
°C
I
Contr.
1.1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
110
0
0
2
4
6
8
V
11
T
A
V
S
4
2007-05-29
BCR400W
Total power dissipation
P
tot
=
f
(T
S
)
400
mW
300
Note that up to
T
S=115°C
it is not possible to exceed
P
tot
respecting the maximum
ratings of
V
S and
I
Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
P
tot
250
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
Typical application for GaAs FET
with active bias controller
RF IN
RF OUT
100 pF
100 k
Ω
BCR 400
1
4
R
ext
3
2
100 k
Ω
-
V
G
1 nF
+
V
S
EHA07190
5
2007-05-29
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