FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
FFB20UP20DN_F085
10A, 200V Ultrafast Dual Rectifiers
Features
High Reverse Voltage : V
RRM
= 200V
Avalanche Energy Rated
Planar Construction
February
2010
tm
Description
The FFB20UP20DN_F085 is an ultrafast rectifier. It has
a low
forward voltage drop and is a silicon nitride passivated
ion-implanted
epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
rectifier in a variety of switching power supplies and other
power switching applications. Its low stored charge and
hyperfast recovery minimize ringing and electrical noise in
many power switching circuits, thus reducing power loss in
the switching transistors.
Applications
Output Rectifiers
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
Qualified to AEC Q101
RoHS Compliant
Pin Assignments
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
f(avg)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
@ T
C
= 155
o
C
Ratings
200
200
200
10
100
-55 to +175
Units
V
V
V
A
A
°C
Thermal Characteristics
T
C
= 25°C unless otherwise noted
Symbol
R
θJC
1
Parameter
Maximum Thermal Resistance, Junction to Case
Max
3.5
Units
°C/W
Package Marking and Ordering Information
Device Marking
F20UP20DN
Device
FFB20UP20DN_F085
Package
TO-263
1
Reel Size
13”
Tape Width
24mm
Quantity
800
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©2010 Fairchild Semiconductor Corporation
FFB20UP20DN_F085 Rev. A
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
Typical Characteristics
T
C
= 25°C unless otherwise noted
20
Forward Current, I
F
[A]
100
o
10
Reverse Current, I
R
[
µ
A
]
T
C
= 175 C
T
C
= 100 C
o
10
1
0.1
0.01
T
C
= 175 C
o
1
T
C
= 25 C
o
T
C
= 100 C
o
T
C
= 25 C
o
0.1
0.2
0.4
0.6
0.8
Forward Voltage, V
F
[V]
1.0
1.2
1E-3
0
50
100
150
Reverse Voltage , V
R
[V]
200
Figure 1. Typical Forward Voltage Drop
400
Reverse Recovery Time, t
rr
[ns]
f = 1MHz
Figure 2. Typical Reverse Current
50
45
T
C
= 175 C
o
I
F
= 10A
Capacitance
,
cj [pF]
100
40
35
30
25
20
50
T
C
= 150 C
T
C
= 25 C
o
o
10
0.1
1
10
Reverse Voltage , V
R
[V]
100
100
150
200
di/dt
[
A/
µ
s
]
250
300
Figure 3. Typical Junction Capacitance
8
Reverse Recovery Current, I
rr
[
A
]
I
F
= 10A
T
C
= 175 C
o
Figure 4. Typical Reverse Recovery Time
Average Recitified Forward Current, I
F(AV)
[A]
12
10
8
6
4
2
0
120
DC
6
T
C
= 150 C
o
4
T
C
= 25 C
o
2
0
50
100
150
200
di/dt
[
µ
/s
]
250
300
130
140
150
160
Case Temperature, T
C
(
o
C
)
170
Figure 5. Typical Reverse Recovery Current
Figure 6. Case Temperature, T
c
[
o
C]
FFB20UP20DN_F085 Rev. A
3
www.fairchildsemi.com
10.67
9.65
-A-
1.68
1.00
10.67
4
4
9.45
9.65
8.38
10.00
1.78 MAX
2
0.25 MAX
PLASTIC BODY
STUB
2
1
(2.12)
3.80
3
1.78
1.14
0.99
0.51
5.08
1
3
1.05
5.08
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
0.25
M
B A
M
FRONT VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
6.22 MIN
-B-
1.65
1.14
4.83
4.06
4
6.86 MIN
4
15.88
14.61
SEE
DETAIL A
2
2
3
1
3
1
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
DIMENSIONING AND TOLERANCING PER
ASME Y14.5 - 2009.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
B
F) FILENAME: TO263A02REV8
BACK VIEW - DIODE PRODUCTS VERSION
ALTERNATIVE SUPPLIER DETAIL
GAGE PLANE
0.74
0.33
0.25
2.79
1.78
0.25 MAX
SEATING
PLANE
SCALE: 2X
0.10
(5.38)
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Rev. I77
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