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FFB20UP20DN_F085

Description
Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size511KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FFB20UP20DN_F085 Overview

Rectifier Diode, Avalanche, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AB

FFB20UP20DN_F085 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionR-PSSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresFREEWHEELING DIODE
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.04 µs
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers
FFB20UP20DN_F085
10A, 200V Ultrafast Dual Rectifiers
Features
High Reverse Voltage : V
RRM
= 200V
Avalanche Energy Rated
Planar Construction
February
2010
tm
Description
The FFB20UP20DN_F085 is an ultrafast rectifier. It has
a low
forward voltage drop and is a silicon nitride passivated
ion-implanted
epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
rectifier in a variety of switching power supplies and other
power switching applications. Its low stored charge and
hyperfast recovery minimize ringing and electrical noise in
many power switching circuits, thus reducing power loss in
the switching transistors.
Applications
Output Rectifiers
Switching Mode Power Supply
Free-wheeling diode for motor application
Power switching circuits
Qualified to AEC Q101
RoHS Compliant
Pin Assignments
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
f(avg)
I
FSM
T
J,
T
STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
@ T
C
= 155
o
C
Ratings
200
200
200
10
100
-55 to +175
Units
V
V
V
A
A
°C
Thermal Characteristics
T
C
= 25°C unless otherwise noted
Symbol
R
θJC
1
Parameter
Maximum Thermal Resistance, Junction to Case
Max
3.5
Units
°C/W
Package Marking and Ordering Information
Device Marking
F20UP20DN
Device
FFB20UP20DN_F085
Package
TO-263
1
Reel Size
13”
Tape Width
24mm
Quantity
800
www.fairchildsemi.com
©2010 Fairchild Semiconductor Corporation
FFB20UP20DN_F085 Rev. A
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