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DL4454

Description
SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size197KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
Download Datasheet View All

DL4454 Overview

SILICON, SIGNAL DIODE

MCC
Features
l
l
l
l
l
  omponents
21201 Itasca Street Chatsworth

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DL4454
Silicon
Switching Diode
500 mW 75 Volt
Fast Switching Speed
Low Current Leakage
Low Cost
Compression Bond Construction
Surface Mount Application
Maximum Ratings
l
Operation & Storage Temperature: -55
o
C to +150
o
C
l
Maximum Thermal Resistance: 400K/W Junction
to Ambient
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Reverse Volt.
Peak Reverse Volt.
Average Rectified Current
Power Dissipation
Junction Temperature
Peak Forward Surge Current
Maximum Instantaneous
Forward Volt.
Maximum DC Reverse
Current At Rated DC Blocking
Volt.
Typical Junction Capacitance
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
V
F
I
R
50V
75V
Resistive Load
150mA f>50Hz
500mW
175 C
500mA 8.3ms, half sine
I
FM
=10mA;
1.0V
T
J
=25
o
C
0.1uA
V
R
=50V
T
J
=25 C
Measured at
1.0MHz, V
R
=4.0V
I
F
=10mA V
R
=6V
I
R
=1mA
R
L
=100OHMS
o
o
MINIMELF
Cathode Mark
C
B
A
DIMENSION
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
C
J
2pF
SUGGESTED SOLDER
PAD LAYOUT
0.105
Reverse Recovery Time
T
rr
4nS
Pulse test: Pulse width 300 usec, Duty cycle 2%.
0.075”
0.030”
www.mccsemi.com
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