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GBU10K

Description
Bridge Rectifier Diode, 10A, 800V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size177KB,2 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
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GBU10K Overview

Bridge Rectifier Diode, 10A, 800V V(RRM)

GBU10K Parametric

Parameter NameAttribute value
MakerMOSPEC
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current220 A
Number of components4
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
Base Number Matches1
MOSPEC
10A GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES
*Glass
Passivated Die Construction
*Low
Forward Voltage Drop
*High
Current Capability
*High
Reliability
*High
Surge Current Capability
MECHANICAL DATA
*Case:
Molded Plastic
*Epoxy:
UL94V-O rate flame retardant
*Terminals:Plated
Leads Solderable
Per MIL-STD-202 Method 208
*Polarity:As
Marking on Body
*Mounting
Position: Any
*Weight:
4.0 gram (approx.)
*Marking:Type
Number
GBU10A THRU GBU10K
Dim
A
B
C
D
E
G
H
J
K
L
M
N
P
GBU
Min
21.80
18.30
7.40
3.50
1.52
2.16
4.83
1.65
1.65
0.76
3.30
17.50
0.46
Unit :mm
Max
22.30
18.80
7.90
4.10
2.03
2.54
5.33
2.16
2.03
1.02
3.56
18.00
0.56
MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS
* Rating at 25℃ ambient temperature unless otherwise specified
* Single phase,half wave. 60Hz, resistive or inductive load.
* For capacitive load derate current by 20 %
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current @ T
C
=100℃
Non-Repetitive Peak Surge Current
8.3 ms Single half sine-wave superimposed on
rated load
Forward Voltage (per element) ( I
F
=4.0 Amp)
Peak Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
I
2
t Rating for Fusing( t<8.35MS) (note 2)
Typical Thermal Resistance (per leg)(note 1)
Typical Junction Capacitance per element
(Note 3)
Operating and Storage Temperature Range
Symbol GBU10A GBU10B GBU10D GBU10G GBU10J GBU10K
V
RRM
V
RWM
V
R
V
R(RMS)
I
O(AV)
I
FSM
V
FM
I
R
I
2
t
R
θ
jc
C
J
T
J
, T
stg
50
100
200
400
600
800
Unit
V
35
70
140
10
220
1.0
5.0
500
200
2.2
60
280
420
560
V
A
A
V
uA
A
2
s
k/W
pF
-65 to +150
Note: 1.United mounted on 100 × 100 × 1.6 mm copper plate heatsink.
2.Non-repetitive, for t>1.0ms and <8.3 ms
3 Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

GBU10K Related Products

GBU10K GBU10J GBU10G
Description Bridge Rectifier Diode, 10A, 800V V(RRM) Bridge Rectifier Diode, 10A, 600V V(RRM), Bridge Rectifier Diode, 10A, 400V V(RRM),
Maker MOSPEC MOSPEC MOSPEC
Reach Compliance Code unknown unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
Maximum non-repetitive peak forward current 220 A 220 A 220 A
Number of components 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 10 A 10 A 10 A
Maximum repetitive peak reverse voltage 800 V 600 V 400 V
surface mount NO NO NO
Base Number Matches 1 1 1

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