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8201008ZA

Description
Page Mode DRAM, 64KX1, 120ns, MOS, CQCC18
Categorystorage    storage   
File Size727KB,21 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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8201008ZA Overview

Page Mode DRAM, 64KX1, 120ns, MOS, CQCC18

8201008ZA Parametric

Parameter NameAttribute value
Package body materialCERAMIC
encapsulated codeQCCN
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Number of terminals18
Encapsulate equivalent codeLCC18,.3X.43
Package shapeRECTANGULAR
Package formCHIP CARRIER
surface mountYES
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Filter level38535Q/M;38534H;883B
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum operating temperature110 °C
Minimum operating temperature-55 °C
Is it Rohs certified?No
Objectid2135586502
Reach Compliance CodeUnknown
ECCN codeEAR99
Is SamacsysN
YTEOL4.25
Maximum access time120 ns
memory density65536 bit
memory width1
organize64KX1
refresh cycle256
Nominal supply voltage (Vsup)5 V
Memory IC TypePAGE MODE DRAM
word count65536 words
character code64000
Output characteristics3-STATE
Maximum slew rate0.06 mA
technologyMOS
Temperature levelOTHER
I/O typeSEPARATE
JESD-30 codeR-XQCC-N18
Certification statusNot Qualified

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