Ordering number : EN7364B
30C02MH
SANYO Semiconductors
DATA SHEET
30C02MH
Applications
•
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier Applications
Low-frequency Amplifier, high-speed switching, small motor drive
Features
•
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m
Ω
[IC=0.7A, IB=35mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (600mm
×0.8mm)
2
Conditions
Ratings
40
30
5
700
1.4
600
150
-55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Package Dimensions
unit : mm (typ)
7019A-004
30C02MH-TL-E
30C02MH-TL-H
0 to 0.02
Product & Package Information
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
0.25
2.0
3
0.15
Packing Type : TL
Marking
CL
LOT No.
LOT No.
2.1
1.6
TL
0.25
1
0.65
2
0.3
Electrical Connection
3
0.85
0.07
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
1
2
http://semicon.sanyo.com/en/network
71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141 No.7364-1/6
30C02MH
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
40
30
5
35
255
40
300
540
3.3
85
0.9
190
1.2
Conditions
Ratings
min
typ
max
100
100
800
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
nA
nA
Switching Time Test Circuit
PW=20μs
D.C.
≤1%
INPUT
VR
50Ω
+
220μF
VBE= --5V
IB1
IB2
RB
OUTPUT
RL
+
470μF
VCC=12V
IC=20IB1= --20IB2=300mA
Ordering Information
Device
30C02MH-TL-E
30C02MH-TL-H
Package
MCPH3
MCPH3
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb Free
Pb Free and Halogen Free
700
IC -- VCE
A
15m
A 20mA
10m
A
800
IC -- VBE
VCE=2V
7mA
5mA
700
600
Collector Current, IC -- mA
Collector Current, IC -- mA
30m
500
400
3mA
600
500
400
300
200
100
2mA
1mA
A
200
100
0
0
400μA
200μA
IB=0A
100
200
300
400
500
600
700
800
900
1000
0
0
0.2
0.4
0.6
Ta=7
5
°
25
°
C
50m
300
0.8
--25
°
C
C
1.0
IT05083
Collector-to-Emitter Voltage, VCE -- mV
IT05082
Base-to-Emitter Voltage, VBE -- V
No.7364-2/6
30C02MH
1000
hFE -- IC
Ta=75
°
C
VCE=2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
1000
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
1.0
2
3
VCE(sat) -- IC
IC / IB=20
7
25
°
C
DC Current Gain, hFE
5
--25
°
C
°
C
25
3
7
Ta=
5
°
C
5
°
C
--2
2
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05084
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05085
Collector Current, IC -- mA
1000
7
VCE(sat) -- IC
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
5
3
2
100
7
5
3
2
10
1.0
25
°
C
1.0
7
5
3
2
0.1
1.0
Ta=--25
°
C
5
°
C
=7
Ta
5
°
C
--2
25
°
C
75
°C
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05086
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
10
Cob -- VCB
Collector Current, IC -- mA
1000
fT -- IC
5 7 1000
IT05087
f=1MHz
Gain-Bandwidth Product, fT -- MHz
VCE=10V
Output Capacitance, Cob -- pF
7
7
5
5
3
3
2
2
1.0
1.0
2
3
5
7
10
2
3
5
IT05088
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Base Voltage, VCB -- V
10
7
5
Ron -- IB
IN
Collector Current, IC -- mA
700
PC -- Ta
5 7 1000
IT05089
f=1MHz
1kΩ
1kΩ
IB
OUT
Collector Dissipation, PC -- mW
600
500
400
300
200
100
0
When mounted on ceramic substrate
(600mm
2
×0.8mm)
ON Resistance, Ron --
Ω
3
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
3
5
Base Current, IB -- mA
10
IT06793
7
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
IT05092
No.7364-3/6
30C02MH
Embossed Taping Specification
30C02MH-TL-E, 30C02MH-TL-H
No.7364-4/6
30C02MH
Outline Drawing
30C02MH-TL-E, 30C02MH-TL-H
Mass (g) Unit
0.007 mm
* For reference
Land Pattern Example
Unit: mm
0.4
0.6
2.1
0.65 0.65
No.7364-5/6
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