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T879N14TOF

Description
Silicon Controlled Rectifier, 1750A I(T)RMS, 1115000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element
CategoryAnalog mixed-signal IC    Trigger device   
File Size76KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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Silicon Controlled Rectifier, 1750A I(T)RMS, 1115000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element

T879N14TOF Parametric

Parameter NameAttribute value
Terminal locationUNSPECIFIED
Package body materialCERAMIC, METAL-SEALED COFIRED
Package formDISK BUTTON
surface mountYES
Terminal surfaceMATTE TIN
Terminal formUNSPECIFIED
Number of components1
Number of terminals4
Package shapeROUND
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Objectid2110825023
package instructionDISK BUTTON, O-CXDB-X4
Reach Compliance CodeUnknown
YTEOL0
Is SamacsysN
ECCN codeEAR99
Trigger device typeSCR
Nominal circuit commutation break time250 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger voltage2.2 V
On-state non-repetitive peak current17500 A
Repeated peak reverse voltage1400 V
Maximum DC gate trigger current250 mA
Maximum holding current300 mA
Maximum leakage current100 mA
On-state Current-Max1115000 A
Maximum rms on-state current1750 A
Off-state repetitive peak voltage1400 V
JESD-30 codeO-CXDB-X4
JESD-609 codee3
Certification statusNot Qualified
Technische Information / Technical Information
Netz-Thyristor
Phase Control Thyristor
T 879 N 12 ...18
T
vj
= - 40°C...T
vj max
N
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak foward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
RMSM on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state voltage
v
T
= A + B x i
T
+ C x ln (i
T
+ 1) + D x
i
T
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündener Steuerstrom
gate non-trigger current
Nicht zündene Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse currents
Zündverzug
gate controlled delay time
T
vj
= T
vj max
, i
T
= 3600 A
T
C
= 85 °C
T
C
= 68 °C
T
vj
= 25°C, t
p
= 10 ms
T
vj
= T
vj max
, t
p
= 10 ms
T
vj
= 25°C, t
p
= 10ms
T
vj
= T
vj max
, t
p
= 10ms
DIN IEC 747-6
f=50 Hz, v
L
= 10V, i
GM
= 1 A
di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
5.Kennbuchstabe / 5th letter F
V
DRM
, V
RRM
V
DSM
V
RSM
I
TRSMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
1200
1600
1200
1600
1300
1700
1400
1800
1400
1800
1500
1900
1750
879
1115
17500
15500
1530
1200
200
V
V
V
V
V
V
A
A
A
A
A
1)
T
vj
= - 40°C...T
vj max
T
vj
= + 25°C...T
vj max
3
A²s *10
3
A²s *10
A/µs
(dv
D
/dt)
cr
1000
V/µs
v
T
V
T(TO)
r
T
A= 1,04647
B=2,313E-04
C=-5,398E-02
D= 8,494E-03
I
GT
V
GT
I
GD
V
GD
I
H
max.
1,95
0,85
0,27
V
V
mΩ
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= 25°C, v
D
= 6 V
max.
max.
max.
max.
max.
max.
max.
250
2,2
10
5
0,25
300
1500
mA
V
mA
mA
mV
mA
mA
T
vj
= 25°C, v
D
= 6V
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
T
vj
= T
vj max
,v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
T
vj
= 25°C, v
D
= 6 V, R
GK
>= 5
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs
t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
DIN IEC 747-6
T
vj
= 25°C
i
GM
= 1 A, di
G
/dt = 1 A/µs
i
D
, i
R
t
gd
max.
max.
100
4
mA
µs
1) 1800 V Spannungsklasse auf Anfrage / Voltage class on demand
SZ-M / 11.05.99, K.-A.Rüther
A 108/95
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