KRA302V datasheet, PDF - EEWORLD Datasheet

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KRA302V: DescriptionEPITAXIAL PLANAR PNP TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size106KB，6 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KRA302V Overview

EPITAXIAL PLANAR PNP TRANSISTOR

KRA302V Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

KRA301V~KRA306V

EPITAXIAL PLANAR PNP TRANSISTOR

FEATURES

With Built-in Bias Resistors.

Simplify Circuit Design.

High Packing Density.

EQUIVALENT CIRCUIT

OUT

BIAS RESISTOR VALUES

TYPE NO.

KRA301V

R1(k

4.7

2.2

4.7

)

R2(k

4.7

)

KRA302V

KRA303V

KRA304V

COMMON(+)

1. COMMON (EMITTER)

2. IN (BASE)

3. OUT (COLLECTOR)

KRA305V

KRA306V

VSM

MAXIMUM RATING (Ta=25

Output Voltage

)

SYMBOL

KRA301V

306V

RATING

-50

-20, 10

-30, 10

-40, 10

-12, 5

-20, 5

KRA301V

306V

stg

-100

100

150

-55

150

UNIT

CHARACTERISTIC

KRA301V

KRA302V

Input Voltage

KRA303V

KRA304V

KRA305V

KRA306V

Output Current

Power Dissipation

Junction Temperature

Storage Temperature Range

MARK SPEC

TYPE

MARK

KRA301V

KRA302V

KRA303V

KRA304V

KRA305V

KRA306V

Marking

Reduce a Quantity of Parts and Manufacturing Process.

DIM MILLIMETERS

1.2 +0.05

0.8 +0.05

0.5 + 0.05

0.3 + 0.05

1.2 + 0.05

0.8 + 0.05

0.40

0.12 + 0.05

0.2 + 0.05

Type Name

2001. 7. 23

Revision No : 0

1/6

KRA302V Related Products

	KRA302V	KRA301V	KRA303V	KRA304V	KRA305V	KRA306V
Description	EPITAXIAL PLANAR PNP TRANSISTOR	EPITAXIAL PLANAR PNP TRANSISTOR	EPITAXIAL PLANAR PNP TRANSISTOR	EPITAXIAL PLANAR PNP TRANSISTOR	EPITAXIAL PLANAR PNP TRANSISTOR	EPITAXIAL PLANAR PNP TRANSISTOR
Maker	KEC	KEC	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR RATIO 1	BUILT IN BIAS RESISTOR RATIO 21.363	BUILT IN BIAS RESISTOR RATIO 10
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50	30	70	80	80	80
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Base Number Matches	1	1	1	1	1	1

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