DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
5
ORDERING INFORMATION
PART NUMBER
2SK3062
2SK3062-S
2SK3062-ZJ
2SK3062-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD
DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
•
Low on-state resistance
R
DS(on)1
= 8.5 mΩ MAX. (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 12 mΩ MAX. (V
GS
= 4.0 V, I
D
= 35 A)
•
Low C
iss
: C
iss
= 5200 pF TYP.
•
Built-in gate protection diode
Notes
TO-220SMD package is produced only in
Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (Pulse)
Note1
(TO-220AB)
60
±20
+20,
−10
±70
±280
100
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
V
DSS
V
GSS(AC)
V
GSS(DC)
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Starting Tch = 25 °C, V
DD
= 30 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V
(TO-263, TO-220SMD)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D13101EJ2V0DS00 (2nd edition)
Date Published April 2001 NS CP(K)
Printed in Japan
The mark
5
shows major revised points.
©
1998,1999
2SK3062
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 48 V
V
GS(on)
= 10 V
I
D
= 70 A
I
F
= 70 A, V
GS
= 0 V
I
F
= 70 A, V
GS
= 0 V
di/dt = 100 A /
µ
s
TEST CONDITIONS
V
DS
= 60 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 35 A
V
GS
= 10 V, I
D
= 35 A
V
GS
= 4.0 V, I
D
= 35 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 30 V ,I
D
= 35 A
V
GS(on)
= 10 V
R
G
= 10
Ω
1.0
20
1.5
87
6.3
8.2
5200
1300
480
75
1150
360
480
95
13
30
0.97
70
140
8.5
12
MIN.
TYP.
MAX.
10
±10
2.0
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
BV
DSS
V
DS
V
GS
0
50
Ω
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
R
L
PG.
R
G
V
DD
I
D
90%
90%
V
GS
V
GS
Wave Form
0
10%
V
GS
(on)
90%
I
AS
I
D
V
DD
I
D
I
D
Wave Form
0 10%
10%
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
50
Ω
R
L
V
DD
PG.
2
Data Sheet D13101EJ2V0DS
2SK3062
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
25
50
75
100 125 150 175 200
100
80
60
40
20
120
100
80
60
40
20
0
25
50
75
100 125 150 175 200
0
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
5
1000
FORWARD BIAS SAFE OPERATING AREA
I
D(pulse)
PW
I
D
- Drain Current - A
100
i
)
im 0 V
)
L
1
on
=
S(
S
R
D
t V
G
(a
ted
I
D(DC)
1m
s
10
ms
10
0m
s
DC
10
0
µ
s
=1
0
µ
s
10
Po
Lim wer
ite Dis
d
sip
ati
on
1
T
C
= 25˚C
Single Pulse
1
10
100
V
DS
- Drain to Source Voltage - V
0.1
0.1
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance - ˚C/W
100
R
th(ch-A)
= 83.3 ˚C/W
10
R
th(ch-C)
= 1.25 ˚C/W
1
0.1
0.01
0.001
10
µ
T
C
= 25˚C
Single Pulse
100
µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D13101EJ2V0DS
3
2SK3062
FORWARD TRANSFER CHARACTERISTICS
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
I
D
- Drain Current - A
10
I
D
- Drain Current - A
T
A
= 125˚C
75˚C
25˚C
−25˚C
200
V
GS
= 10 V
V
GS
= 4.0 V
1
100
0.1
Pulsed
V
DS
= 10 V
4
5
0
1
2
3
0
1
2
3
4
V
GS
- Gate to Source Voltage - V
V
DS
- Drain to Source Voltage - V
100
T
ch
=
−25˚C
25˚C
75˚C
125˚C
R
DS(on)
- Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| y
fs
| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
10
10
I
D
= 35 A
1
V
DS
= 10 V
Pulsed
100
0.1
1.0
10
0
5
10
15
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30
Pulsed
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
- Gate to Source Cut-off Voltage - V
2.0
V
DS
= 10 V
I
D
= 1 mA
20
1.5
1.0
10
V
GS
= 4.0 V
10 V
0.5
0
0.1
0
1
10
100
1000
−50
0
50
100
150
I
D
- Drain Current - A
T
ch
- Channel Temperature - ˚C
4
Data Sheet D13101EJ2V0DS
2SK3062
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
V
GS
= 4.0 V
15
10 V
10
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
V
GS
= 4.0 V
0V
10
1
5
I
D
= 35 A
−50
0
50
100
150
0.1
Pulsed
0
0.5
1
1.5
V
SD
- Source to Drain Voltage - V
0
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - nF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
10000
V
DS
= 30 V
V
GS
= 10 V
R
G
= 10
Ω
t
r
1000
t
d(off)
100
t
d(on)
t
f
10
C
iss
1
C
oss
C
rss
10
0.1
1
10
100
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
V
DS
- Drain to Source Voltage - V
60
V
DD
= 12 V
30 V
48 V
12
10
8
6
100
40
10
20
4
2
1
0.1
1
10
100
0
25
50
75
100
0
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
V
GS
- Gate to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A /
µ
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
I
D
= 70 A
14
Data Sheet D13101EJ2V0DS
5
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