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MT49H16M16HU-5

Description
DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
Categorystorage    storage   
File Size2MB,40 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT49H16M16HU-5 Overview

DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144

MT49H16M16HU-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instruction11 X 18.50 MM, FBGA-144
Contacts144
Reach Compliance Codenot_compliant
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Other featuresAUTO REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B144
JESD-609 codee0
length18.5 mm
memory density268435456 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals144
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature95 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA144,12X18,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)235
power supply1.8,2.5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Continuous burst length2,4
Maximum slew rate0.519 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead/Silver (Sn/Pb/Ag)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width11 mm
256Mb: x16, x32 2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
Features
Reduced Latency DRAM (RLDRAM )
MT49H8M32 – 1 Meg x 32 x 8 Banks
MT49H16M16 – 2 Meg x 16 x 8 Banks
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/
®
Features
• Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks
• Cyclic bank addressing for maximum data
bandwidth
• Non multiplexed addresses
• Non interruptible sequential burst of two (2-bit
prefetch) and four (4-bit prefetch) DDR
• Up to 600 Mb/sec/pin data rate
• Programmable READ latency (RL) of 5-6
• Data valid signal (DVLD) activated as read data is
available
• Data mask signals (DM0/DM1) to mask first and
• second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• 2.5V VEXT, 1.8V V
DD
, 1.8V V
DD
Q I/O
• Pseudo-HSTL 1.8V I/O Supply
• Internal auto precharge
• Refresh requirements: 32ms at 95°C case
temperature (8K refresh for each bank, 64K refresh
command must be issued in total each 32ms)
• 144-pin, 11mm x 18.5mm µBGA/FBGA package
Figure 1:
144-Ball µBGA
Table 1:
Valid Part Numbers
Description
8 Meg x 32
16 Meg x 16
Part Number
MT49H8M32HU-xx
MT49H16M16HU-xx
Options
Marking
• Clock Cycle Timing
3.3ns (300 MHz)
-33
4ns (250 MHz)
-4
2
5ns (200 MHz)
-5
• Configuration
8 Meg x 32 (1 Meg x 32 x 8 banks) MT49H8M32
16 Meg x 16 (2 Meg x 16
MT49H16M16
x 8 banks)
• Operating temperature
Commercial (0°C to +95°C)
None
Industrial (TC = –40°C to +95°C)
IT
Industrial (TA = –40°C to +85°C)
• Package
144-ball, µBGA
FM
144-ball, µBGA (Pb-Free)
BM
1
144-ball, FBGA
HU
3
144-ball, FBGA (Pb-Free)
HT
1,3
Notes: 1. Contact factory for availability.
2. End of life.
3. The FBGA package is being phased out.
pdf: 09005aef81121545/source: 09005aef810c0ffc
256Mbx16x32RLDRAM_1.fm - Rev I 4/08 EN
The Micron
®
256Mb reduced latency DRAM
(RLDRAM
®
) contains 8 banks x32Mb of memory
accessible with 32-bit or 16-bit I/Os in a double data
rate (DDR) form at where the data is provided and syn-
chronized with a differential echo clock signal.
RLDRAM does not require row/column address multi-
plexing and is optimized for fast random access and
high-speed bandwidth.
RLDRAM is designed for high bandwidth communica-
tion data storage—telecommunications, networking,
and cache applications, etc.
General Description
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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