W3J512M32K-1066BI datasheet, PDF

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W3J512M32K-1066BI: DescriptionDDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136; Categorystorage storage; File Size2MB，43 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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W3J512M32K-1066BI Overview

DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136

W3J512M32K-1066BI Parametric

Parameter Name	Attribute value
Maker	Microsemi
package instruction	FBGA, BGA136,12X17,32
Reach Compliance Code	compliant
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.3 ns
Other features	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Maximum clock frequency (fCLK)	533 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B136
length	14.6 mm
memory density	17179869184 bit
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	136
word count	536870912 words
character code	512000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA136,12X17,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.35 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	3.84 mm
self refresh	YES
Continuous burst length	8
Maximum standby current	0.072 A
Maximum slew rate	0.76 mA
Maximum supply voltage (Vsup)	1.45 V
Minimum supply voltage (Vsup)	1.283 V
Nominal supply voltage (Vsup)	1.35 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	10.1 mm
Base Number Matches	1

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W3J512M32K-XBX

W3J512M32/36/40K(T)-XB2X

*PRELIMINARY

2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip

Package

FEATURES



DDR3 Data Rate = 800, 1,066, 1333 Mb/s



Packages:

• 136 PBGA, 204 PBGA 10 x 14.5mm

• 0.8mm pitch



Supply Voltage = 1.35V



Center terminated push/pull I/O



Differential bidirectional data strobe



Differential clock inputs (CK, CK#)



8n-bit prefetch architecture



Eight internal banks



Fixed Burst length (BL) of 8 and Burst Chop (BC) of 4



Selectable BC4 or BL8 on-the-ﬂy (OTF)



Auto Refresh and Self Refresh Modes



Nominal and dynamic On Die Termination (ODT)



Programmable CAS read latency (CL)



Posted CAS additive latency



Write leveling



Programmable CAS write latency (CWL) based on t



Commercial, industrial and military** temperature ranges



Organized as 1 rank of 512M x 32 or 512M x36 or

512M x40



1.5V option available in same packages.

Refer to W3J512M32/36/40G data sheet.



W3J512M32K-XBX is footprint compatible with

M41K256M32 device.

Micron

is a registered trademark of Micron Technology, Inc.

* This product is under development, is not qualiﬁed or characterized and is subject to change or

cancellation without notice.

** Contact factory for availability.

BENEFITS



74% Space savings vs. FBGA



Reduced part count



48% I/O reduction vs. FBGA



Optional:

• Address/control terminations



Differential clock terminations (not populated in XBX

package)



Output drive calibration resistors (RZQ)



Reduced trace lengths for lower parasitic capacitance



Suitable for hi-reliability applications



Enhanced thermal management

TYPICAL APPLICATION

Zynq

7000

Series

RAM

DDR3

W3J512M32K-XBX

Host

FPGA/

Processor

SSD (SLC)

MSM32/MSM64 (SATA BGA)

)

W7N16GVHxxBI (PATA BGA)

M512/M256/M128 (SATA, 2.5in)

Micron

FIGURE 1 – DENSITY COMPARISONS

CSP Approach (mm)

10.5

FBGA

2.0

W3J512M40KT-XB2X

2.0

FBGA

2.0

FBGA

2.0

FBGA

W3J512M40KT-XB2X

14.5

74%***

48%

Area

I/O Count

556.5 mm

5 x 78 balls = 390 balls

145 mm

204 Balls

*** not including terminations

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

February 2014

Rev. 2

Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp

W3J512M32K-1066BI Related Products

	W3J512M32K-1066BI	W3J512M32K-1066BM	W3J512M32K-1066B2I	W3J512M32K-1066B2C	W3J512M32K-1066BC	W3J512M32K-1066B2M	W3J512M32KT-1066B2C	W3J512M32KT-1066B2I	W3J512M32KT-1066B2M
Description	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, BGA-204	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, BGA-204	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA136, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-136	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, BGA-204	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204	DDR DRAM, 512MX32, 0.3ns, CMOS, PBGA204, 10 X 14.50 MM, 0.80 MM PITCH, PLASTIC, BGA-204
Maker	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi	Microsemi
package instruction	FBGA, BGA136,12X17,32	FBGA, BGA136,12X17,32	FBGA, BGA204,12X17,32	FBGA, BGA204,12X17,32	FBGA, BGA136,12X17,32	FBGA, BGA204,12X17,32	FBGA, BGA204,12X17,32	FBGA, BGA204,12X17,32	FBGA, BGA204,12X17,32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	0.3 ns	0.3 ns	0.3 ns	0.3 ns	0.3 ns	0.3 ns	0.3 ns	0.3 ns	0.3 ns
Other features	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED	AUTO/SELF REFRESH; LG-MAX; WD-MAX; SEATED HT-CALCULATED
Maximum clock frequency (fCLK)	533 MHz	533 MHz	533 MHz	533 MHz	533 MHz	533 MHz	533 MHz	533 MHz	533 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	8	8	8	8	8	8	8	8	8
JESD-30 code	R-PBGA-B136	R-PBGA-B136	R-PBGA-B204	R-PBGA-B204	R-PBGA-B136	R-PBGA-B204	R-PBGA-B204	R-PBGA-B204	R-PBGA-B204
length	14.6 mm	14.6 mm	14.6 mm	14.6 mm	14.6 mm	14.6 mm	14.6 mm	14.6 mm	14.6 mm
memory density	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit	17179869184 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	136	136	204	204	136	204	204	204	204
word count	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words	536870912 words
character code	512000000	512000000	512000000	512000000	512000000	512000000	512000000	512000000	512000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	125 °C	85 °C	70 °C	70 °C	125 °C	70 °C	85 °C	125 °C
Minimum operating temperature	-40 °C	-55 °C	-40 °C	-	-	-55 °C	-	-40 °C	-55 °C
organize	512MX32	512MX32	512MX32	512MX32	512MX32	512MX32	512MX32	512MX32	512MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA	FBGA
Encapsulate equivalent code	BGA136,12X17,32	BGA136,12X17,32	BGA204,12X17,32	BGA204,12X17,32	BGA136,12X17,32	BGA204,12X17,32	BGA204,12X17,32	BGA204,12X17,32	BGA204,12X17,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
power supply	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	3.84 mm	3.84 mm	4.1 mm	4.1 mm	3.84 mm	4.1 mm	3.84 mm	3.84 mm	3.84 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	8	8	8	8	8	8	8	8	8
Maximum standby current	0.072 A	0.072 A	0.072 A	0.072 A	0.072 A	0.072 A	0.072 A	0.072 A	0.072 A
Maximum slew rate	0.76 mA	0.76 mA	0.76 mA	0.76 mA	0.76 mA	0.76 mA	0.76 mA	0.76 mA	0.76 mA
Maximum supply voltage (Vsup)	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V	1.45 V
Minimum supply voltage (Vsup)	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V	1.283 V
Nominal supply voltage (Vsup)	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V	1.35 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	MILITARY	INDUSTRIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL	INDUSTRIAL	MILITARY
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm	10.1 mm
Base Number Matches	1	1	1	1	1	1	-	-	-

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