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2N6122-6263

Description
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size120KB,3 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Parametric View All

2N6122-6263 Overview

4A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB

2N6122-6263 Parametric

Parameter NameAttribute value
Objectid1407128967
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance CodeUnknown
ECCN codeEAR99
Is SamacsysN
YTEOL0
Terminal locationSINGLE
Shell connectionCOLLECTOR
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Terminal formTHROUGH-HOLE
ConfigurationSINGLE
Minimum DC current gain (hFE)10
Number of components1
Number of terminals3
Polarity/channel typeNPN
surface mountNO
Maximum collector current (IC)4 A
Collector-emitter maximum voltage60 V
Certification statusNot Qualified
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum operating temperature150 °C
Maximum power consumption environment40 W
transistor applicationsSWITCHING
Transistor component materialsSILICON
VCEsat-Max1.4 V

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