DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD17 series
General purpose
controlled avalanche rectifiers
Product specification
Supersedes data of 1999 Nov 11
2001 Oct 26
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy absorption capability
•
Shipped in 8 mm embossed tape
•
Smallest surface mount rectifier outline.
olumns
BYD17 series
k
a
MAM061
DESCRIPTION
Cavity free cylindrical glass package through Implotec™
(1)
technology.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
V
RWM
crest working reverse voltage
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
V
R
continuous reverse voltage
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
2001 Oct 26
2
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
SYMBOL
I
F(AV)
PARAMETER
average forward current
CONDITIONS
T
tp
= 105
°C;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°C;
PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
BYD17 series
MIN.
−
MAX.
UNIT
1.5 A
−
0.6 A
−
20
A
E
RSM
T
stg
T
j
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
−
−65
−65
7
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
−
3
21
−
−
−
−
−
1
100
−
−
V
V
V
V
V
µA
µA
µs
pF
MIN.
−
−
TYP.
−
−
MAX.
0.93
1.05
UNIT
V
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
30
150
UNIT
K/W
K/W
2001 Oct 26
3
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
GRAPHICAL DATA
BYD17 series
handbook, halfpage
3
MBH394
1.0
IF(AV)
(A)
0.8
MSC293
IF(AV)
(A)
2
0.6
0.4
1
0.2
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
160
200
Tamb (°C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.2
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
handbook, halfpage
2.5
P
(W)
2.0
MBH395
MGC736
200
handbook, halfpage
Tj
a = 3 2.5
2 1.57 1.42
(
o
C)
150
1.5
100
1.0
D
0.5
50
G
J
K
M
0
0
0.4
0.8
1.2
1.6
IF(AV) (A)
0
0
400
800
1200
VR, VRRM (V)
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
2001 Oct 26
4
Philips Semiconductors
Product specification
General purpose
controlled avalanche rectifiers
BYD17 series
MBG048
handbook, halfpage
6
10
3
handbook, halfpage
IR
(µA)
2
MGC739
IF
(A)
4
10
2
10
0
0
1
VF (V)
2
1
0
40
80
120
160
200
T (
o
C)
j
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MGC740
50
Cd
(pF)
4.5
10
50
2.5
1
1
10
10
2
V
R
(V)
10
3
1.25
MSB213
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9
Printed-circuit board for surface mounting.
2001 Oct 26
5
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