K4H280838E-TCB3 datasheet, PDF

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K4H280838E-TCB3: DescriptionDDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66; Categorystorage storage; File Size181KB，20 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H280838E-TCB3 Overview

DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66

K4H280838E-TCB3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSSOP66,.46
Contacts	66
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
JESD-609 code	e0
length	22.22 mm
memory density	134217728 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	66
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	2,4,8
Maximum standby current	0.003 A
Maximum slew rate	0.3 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm
Base Number Matches	1

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DDR SDRAM 128Mb E-die (x4, x8, x16)

DDR SDRAM

128Mb E-die DDR SDRAM Specification

Revision 1.0

Rev. 1.0 Dec. 2002

K4H280838E-TCB3 Related Products

	K4H280838E-TCB3	K4H280438E-TLB3	K4H281638E-TLB3	K4H280838E-TLB3	K4H280438E-TCB3	K4H281638E-TCB3
Description	DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66	DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66	DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66	DDR DRAM, 32MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66	DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46
Contacts	66	66	66	66	66	66
Reach Compliance Code	compliant	compliant	unknown	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns	0.7 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz	166 MHz	166 MHz	166 MHz	166 MHz	166 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 code	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609 code	e0	e0	e0	e0	e0	e0
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit	134217728 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	8	4	16	8	4	16
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	66	66	66	66	66	66
word count	16777216 words	33554432 words	8388608 words	16777216 words	33554432 words	8388608 words
character code	16000000	32000000	8000000	16000000	32000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX8	32MX4	8MX16	16MX8	32MX4	8MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES
Continuous burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
Maximum standby current	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A
Maximum slew rate	0.3 mA	0.28 mA	0.395 mA	0.3 mA	0.28 mA	0.395 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Maker	SAMSUNG	-	-	SAMSUNG	SAMSUNG	SAMSUNG

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