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1N5699B

Description
Variable Capacitance Diode, 12pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size34KB,1 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

1N5699B Overview

Variable Capacitance Diode, 12pF C(T), 65V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

1N5699B Parametric

Parameter NameAttribute value
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.8
minimum quality factor400
Varactor Diode ClassificationABRUPT
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Certification statusNot Qualified
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
ECCN codeEAR99
Is SamacsysN
YTEOL5.6
Objectid8204191153
package instructionO-LALF-W2
Reach Compliance CodeCompliant
Nominal diode capacitance12 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
Number of components1
Maximum power dissipation0.4 W
surface mountNO
Minimum breakdown voltage65 V
ConfigurationSINGLE
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Shell connectionISOLATED
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5681 TO 1N5709
PART
NUMBER
CAPACITANCE
@ 4Vdc
1 MHz (pF)
MIN QUALITY FACTOR
@ 4Vdc
F = 50 MHz
CAPACITANCE RATIO
2V / 40V
4V / 60V
MIN TYP
MIN TYP
MAX WORKING
VOLTAGE
(Vdc)
MIN REVERSE
BREAKDOWN VOLTAGE
Ir = 10µA (Vdc)
1N5681
1N5682
1N5683
1N5684
1N5685
1N5686
1N5687
1N5688
1N5689
1N5690
1N5691
1N5692
1N5693
1N5694
1N5695
1N5696
1N5697
1N5698
1N5699
1N5700
1N5701
1N5702
1N5703
1N5704
1N5705
1N5706
1N5707
1N5708
1N5709
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
6.8
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
600
600
550
550
550
500
500
500
500
450
400
300
250
225
200
450
450
400
400
400
375
375
350
350
325
300
225
175
150
3.1
3.1
3.2
3.2
3.2
3.2
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.4
3.4
3.4
3.4
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.7
2.8
2.8
2.8
2.8
3.2
3.2
3.2
3.2
3.2
3.2
3.2
3.2
2.9
2.9
3.0
3.0
3.0
3.0
3.4
3.4
3.4
3.4
3.4
3.4
3.4
3.4
40
40
40
40
40
40
40
40
40
40
40
40
40
40
40
60
60
60
60
60
60
60
60
60
60
60
60
60
60
45
45
45
45
45
45
45
45
45
45
45
45
45
45
45
65
65
65
65
65
65
65
65
65
65
65
65
65
65
Package Style
DC Power Dissipation
Max Reverse Current (I
R
)
Max Reverse Current (I
R2
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
Capacitance Tolerance:
@ Ta = 25°C
@ Ta = 150°C
Standard Device
Suffix A
Suffix B
DO-7
400 mW
20 nA @ MWV
20 µA @ MWV
-65 to + 175°C
-65 to + 200°C
±20%
±
10%
±
5%
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558
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