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2N2661

Description
Power Bipolar Transistor, 3A I(C), PNP
CategoryDiscrete semiconductor    The transistor   
File Size371KB,4 Pages
ManufacturerGPD Optoelectronics Corp
Download Datasheet Parametric View All

2N2661 Overview

Power Bipolar Transistor, 3A I(C), PNP

2N2661 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature100 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)15 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
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