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BUK453-100B,127

Description
13A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size247KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BUK453-100B,127 Overview

13A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

BUK453-100B,127 Parametric

Parameter NameAttribute value
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.2 Ω
Number of components1
Number of terminals3
Polarity/channel typeN-CHANNEL
surface mountNO
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Certification statusNot Qualified
Maximum operating temperature175 °C
Reach Compliance CodeUnknown
ECCN codeEAR99
Is SamacsysN
YTEOL0
Objectid1452397956
Avalanche Energy Efficiency Rating (Eas)70 mJ
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum pulsed drain current (IDM)52 A
transistor applicationsSWITCHING
Transistor component materialsSILICON
Package formFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Shell connectionDRAIN
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
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