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1N914B

Description
0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
CategoryDiscrete semiconductor    diode   
File Size80KB,3 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
Stay tuned Parametric

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1N914B Overview

0.2A, 100V, SILICON, SIGNAL DIODE, DO-35

1N914B Parametric

Parameter NameAttribute value
Number of terminals2
Package body materialCERAMIC, GLASS-SEALED
Package shapeROUND
Package formLONG FORM
Terminal formWIRE
Terminal locationAXIAL
Shell connectionISOLATED
Number of components1
Maximum output current0.075 A
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage100 V
Diode component materialsSILICON
Maximum forward voltage (VF)0.62 V
Maximum reverse recovery time0.004 µs
surface mountNO
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
JESD-30 codeO-GALF-W2
Certification statusNot Qualified
Maximum non-repetitive peak forward current2 A
Phase1
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Objectid1440515877
Reach Compliance CodeNot Compliant
ECCN codeEAR99
Is SamacsysN
YTEOL0
Is it Rohs certified?No
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