BD137-16PBFREE datasheet, PDF - EEWORLD Datasheet

BD137-16PBFREE: DescriptionPower Bipolar Transistor,; CategoryDiscrete semiconductor The transistor; File Size408KB，3 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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BD137-16PBFREE Overview

Power Bipolar Transistor,

Parameter Name	Attribute value
Number of components	1
Number of terminals	3
Polarity/channel type	NPN
Nominal transition frequency (fT)	190 MHz
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
surface mount	NO
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum power consumption environment	1.25 W
Maximum power dissipation(Abs)	8 W
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.5 V
Is it Rohs certified?	Yes
Date Of Intro	2018-04-26
Is Samacsys	N
YTEOL	0
Objectid	8317465452
Reach Compliance Code	Compliant
ECCN code	EAR99
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Terminal surface	MATTE TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Shell connection	COLLECTOR

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