256KX4 FAST PAGE DRAM, 120ns, CDIP20, CERAMIC, DIP-20
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Parts packaging code | DIP |
| package instruction | DIP, DIP20,.3 |
| Contacts | 20 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| access mode | FAST PAGE |
| Maximum access time | 120 ns |
| Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| I/O type | COMMON |
| JESD-30 code | R-GDIP-T20 |
| memory density | 1048576 bit |
| Memory IC Type | FAST PAGE DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 20 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP20,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 512 |
| Filter level | MIL-STD-883 |
| Maximum standby current | 0.004 A |
| Maximum slew rate | 0.06 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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