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PAM6S17A-T750

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size558KB,7 Pages
ManufacturerProTek Devices
Websitehttp://www.protekdevices.com/
Environmental Compliance
Download Datasheet Parametric View All

PAM6S17A-T750 Overview

Trans Voltage Suppressor Diode,

PAM6S17A-T750 Parametric

Parameter NameAttribute value
JEDEC-95 codeDO-218AB
JESD-30 codeR-PSSO-C1
JESD-609 codee3
GuidelineAEC-Q101; ISO 16750-2; UL REGISTERED
Maximum time at peak reflow temperature10
Humidity sensitivity level1
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Peak Reflow Temperature (Celsius)260
Is it Rohs certified?Yes
ECCN codeEAR99
Date Of Intro2017-05-26
Is SamacsysN
YTEOL8
Objectid8263777296
Reach Compliance CodeCompliant
Other featuresHIGH RELIABILITY, PD-CASE
Maximum breakdown voltage20.9 V
Maximum non-repetitive peak reverse power dissipation4600 W
Reverse test voltage17 V
Maximum forward voltage (VF)1.9 V
Maximum reverse current10 µA
polarityUNIDIRECTIONAL
ConfigurationSINGLE
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Number of components1
Diode component materialsSILICON
Maximum power dissipation6 W
Maximum repetitive peak reverse voltage17 V
surface mountYES
Minimum breakdown voltage18.9 V
Breakdown voltage nominal value19.9 V
Maximum clamping voltage27.6 V
technologyAVALANCHE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Terminal surfaceMATTE TIN
Terminal formC BEND
Terminal locationSINGLE
Shell connectionANODE
Number of terminals1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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