DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5615
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
3-PIN LEAD-LESS MINIMOLD
FEATURES
• 1005 package employed (1.0
×
0.5
×
0.5 mm)
• NF = 1.4 dB TYP.,
S
21e
2
= 12.0 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
2SC5615
2SC5615-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
20
10
1.5
65
140
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10081EJ01V0DS (1st edition)
(Previous No. P15572EJ1V0DS00)
Date Published January 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Corporation 2001
©
NEC Compound Semiconductor Devices 2002
2SC5615
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 10 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 7 mA
–
–
80
–
–
–
800
800
145
nA
nA
–
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz,
Z
S
= Z
opt
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
4.5
10.0
–
–
7.0
12.0
1.4
–
–
–
2.7
0.9
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
EB
D1
80 to 110
FB
D2
100 to 145
2
Data Sheet PU10081EJ01V0DS
2SC5615
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.6
0.5
0.4
0.3
0.2
0.1
f = 1 MHz
300
Total Power Dissipation P
tot
(mW)
250
200
150
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
140
100
50
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 1 V
60
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 2 V
60
Collector Current I
C
(mA)
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
70
V
CE
= 3 V
60
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
25
20
15
10
5
I
B
= 30
µ
A
90
µ
A
300
µ
A
210
µ
A
I
B
: 30
µ
A step
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
150
µ
A
0
2
4
6
8
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
Data Sheet PU10081EJ01V0DS
3
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