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1N6639

Description
Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, HERMETIC SEALED GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size547KB,6 Pages
ManufacturerCobham PLC
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1N6639 Overview

Rectifier Diode, 1 Element, 0.3A, 75V V(RRM), Silicon, HERMETIC SEALED GLASS PACKAGE-2

1N6639 Parametric

Parameter NameAttribute value
JESD-609 codee0
Certification statusNot Qualified
JESD-30 codeO-LALF-W2
Phase1
Is SamacsysN
Objectid8005901373
package instructionHERMETIC SEALED GLASS PACKAGE-2
Reach Compliance CodeUnknown
ECCN codeEAR99
Terminal formWIRE
Terminal locationAXIAL
Shell connectionISOLATED
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Terminal surfaceTIN LEAD
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Number of components1
Maximum output current0.3 A
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountNO
Switching Diodes 1N6638 Series
1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643,
1N6638U & US, 1N6639U & US, 1N6640U & US,
1N6641U & US 1N6642U & US, 1N6643U & US
Features
• Available in JAN, JANS, JANTX, JANTXV
per MIL‐PRF‐19500/578 & /609
• Switching Diodes
• Non‐Cavity Glass Plackage
• Category I Metallurgically Bonded
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature:
Operating Current:
Derating:
Surge Current:
-65°C to +175°C
300mA
Thermal Resistance:
(R
ӨJEC
): U & US 40 °C/W maximum at L = 0”
See Figure 6
(R
ӨJL
): Leaded 150 °C/W maximum at L = .375”
See Figure 7
Thermal Impedance: (Z
ӨJX
): 25 °C/W maximum
See Figure 5
IFSM = 2.5A, half sine wave,
PW = 8.3ms
Electrical Specifications @ TA = + 25 ºC ( Unless Otherwise Specified )
VBR @ IR
TYPES
V(pk)
μA
V(pk)
VFR
V(pk)
1N6638, U & US
1N6639, U & US
1N6640, U & US
1N6641, U & US
1N6642, U & US
1N6643, U & US
150
100
75
75
100
75
100
10
10
10
100
100
125
75
50
50
75
50
5.0
5.0
5.0
5.0
5.0
5.0
tfr
ns
20
10
10
10
20
20
pF
2.5
2.5
2.5
3.0
5.0
5.0
pF
2.0
2.8
2.8
ns
4.5
4.0
4.0
5.0
5.0
6.0
nA dc
35
25
50
nA dc
500
100
100
100
500
500
μA dc
50
50
75
μA dc
100
90
90
90
100
100
VWRM
VFR / tfr @
IF = 200 mA
CT1
VR=0 V
CT2
VR=1.5 V
trr
IR1
IR = 10mA VR=VRWM
IF = 10mA TA = 150°C
IR2
VR=20V
TA = 150°C
IR3
VR=20V
IR4
VR = VRWM
VF @ IF
TYPES
V dc
(min)
1N6638, U & US
1N6639, U & US
1N6640, U & US
0.54
0.76
0.82
0.87
V dc
(max)
1.1
0.8
1.2
0.62
0.86
0.92
1.0
1.1
0.8
1.2
0.8
1.2
VF2 @ IF
TA = -55°C
V dc
(max)
1.2
1.3
-
1.1
1.2
1.2
1.4
IF
mA
(pulsed)
200
10
500
1
50
100
200
200
10
100
10
100
1N6641, U & US
1N6642, U & US
1N6643, U & US
Revision Date: 2/5/2013
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