3SK222-VBA-A datasheet, PDF - EEWORLD Datasheet

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3SK222-VBA-A: DescriptionVHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET; CategoryDiscrete semiconductor The transistor; File Size53KB，6 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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3SK222-VBA-A Overview

VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

3SK222-VBA-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown
Configuration	SINGLE
Maximum drain current (ID)	0.025 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
JESD-609 code	e6
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	21 dB
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK222

RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER

N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

FEATURES

• The Characteristic of Cross-Modulation is good.

CM = 92 dB

TYP. @ f = 200 MHz, G

= –30 dB

PACKAGE DIMENSIONS

(Unit: mm)

0.4

+0.1

–0.05

1.5

+0.2

–0.1

2.8

+0.2

–0.3

• Low Noise Figure:

• High Power Gain:

• Enhancement Type.

NF1 = 1.2 dB TYP. (f = 200 MHz)

NF2 = 1.0 dB TYP. (f = 55 MHz)

= 23 dB TYP. (f = 200 MHz)

(1.8)

0.85 0.95

2.9±0.2

• Automatically Mounting:

• Small Package:

Embossed Type Taping

4 Pins Mini Mold

5°

Drain to Source Voltage

Gate1 to Source Voltage

Gate2 to Source Voltage

Gate1 to Drain Voltage

Gate2 to Drain Voltage

Drain Current

Total Power Dissipation

Channel Temperature

Storage Temperature

≥

10 kΩ

DSX

G1S

G2S

G1D

G2D

stg

±8

(±10)

200

125

–55 to +125

±8

(±10)

1.1

0.8

°C

+0.2

–0.1

0.4

+0.1

–0.05

0.16

+0.1

–0.06

ABSOLUTE MAXIMUM RATINGS (T

= 25

0.6

+0.1

–0.05

5°

0 to 0.1

5°

Source

Drain

Gate 2

Gate 1

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

or fields.

Document No. P10574EJ2V0DS00 (2nd edition)

(Previous No. TD-2267)

Date Published August 1995 P

Printed in Japan

(1.9)

• Suitable for use as RF amplifier in FM tuner and VHF TV tuner.

0.4

+0.1

–0.05

1989

1993

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