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BSM10GD120DN2BOSA1

Description
Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17
CategoryDiscrete semiconductor    The transistor   
File Size301KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSM10GD120DN2BOSA1 Overview

Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17

BSM10GD120DN2BOSA1 Parametric

Parameter NameAttribute value
Certification statusNot Qualified
JESD-30 codeR-XUFM-X17
Maximum operating temperature150 °C
Transistor component materialsSILICON
Nominal off time (toff)460 ns
Nominal on time (ton)105 ns
Reach Compliance CodeUnknown
Samacsys PartID16037147
Samacsys ManufacturerInfineon
Samacsys Modified On2022-12-30 08:18:57
Objectid1299747720
Contacts17
Samacsys StatusIncomplete
Samacsys Pin Count17
package instructionECONOPACK-17
ECCN codeEAR99
Is SamacsysN
YTEOL2
Terminal locationUPPER
Shell connectionISOLATED
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Terminal formUNSPECIFIED
surface mountNO
Maximum collector current (IC)15 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Number of components6
Number of terminals17
Polarity/channel typeN-CHANNEL
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