3SK180-4 datasheet, PDF - EEWORLD Datasheet

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3SK180-4: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size194KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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3SK180-4 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN

3SK180-4 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (Abs) (ID)	0.03 A
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W
Minimum power gain (Gp)	22 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Ordering number:ENN2129B

N-Channel Silicon MOSFET (Dual Gate)

3SK180

High-Frequency General-Purpose Amplifier

Applications

· FM tuners and VHF tuners.

Package Dimensions

unit:mm

2046A

[3SK180]

0.5

1.9

0.95 0.95

0.4

0 to 0.1

Features

· High power gain and low noise figure.

· High forward transfer admittance.

0.16

0.95 0.85

2.9

0.5

0.6

1.5

2.5

1 : Drain

2 : Source

3 : Gate 1

4 : Gate 2

SANYO : CP4

0.8

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate1-to-Source Voltage

Gate2-to-Source Voltage

Drain Current

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDS

VG1S

VG2S

Tch

Tstg

Conditions

1.1

Ratings

±7

200

125

–55 to +125

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate1-to-Source Breakdown Voltage

Gate2-to-Source Breakdown Voltage

Gate1-to-Source Cutoff Voltage

Gate2-to-Source Cutoff Voltage

Gate1-to-Source Leakage Current

Gate2-to-Source Leakage Current

Zero-Gate Voltage Drain Current

Symbol

VDS

V(BR)G1SS

V(BR)G2SS

Conditions

VG1S=–4V, VG2S=0V, IDS=100µA

IG1=10µA, VDS=0, VG2S=0V

IG2=10µA, VDS=0, VG1S=0V

VDS=10V, VG2S=4V, ID=100µA

VDS=10V, VG1S=0V, ID=100µA

VG1S=±5V, VG2S=VDS=0V

VG2S=±5V, VG1S=VDS=0V

VDS=10V, VG1S=0, VG2S=4V

Ratings

min

±7

–3

–2.5

±50

2.5*

24*

typ

max

Unit

VG1S(off)

VG2S(off)

IG1SS

IG2SS

IDSS

* : The 3SK180 is classified by I

DSS

as follows : (unit : mA)

Marking : DJ

DSS

rank : 4, 5, 6

2.5

6.0

5.0

12.0

10.0

24.0

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82599TH (KT)/90895MO (KOTO)6047KI/4246AT, TS 8-9917 No.2129–1/5

3SK180

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 1999. Specifications and information herein are subject to

change without notice.

PS No.2129–5/5

3SK180-4 Related Products

	3SK180-4	3SK180-6	3SK180-5
Description	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CP4, 4 PIN
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4
Reach Compliance Code	unknown	unknow	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	15 V	15 V	15 V
Maximum drain current (Abs) (ID)	0.03 A	0.03 A	0.03 A
Maximum drain current (ID)	0.03 A	0.03 A	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF	0.05 pF	0.05 pF
highest frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W
Minimum power gain (Gp)	22 dB	22 dB	22 dB
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1

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