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1242GB120-407CTVF

Description
Insulated Gate Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size16KB,1 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Download Datasheet Parametric View All

1242GB120-407CTVF Overview

Insulated Gate Bipolar Transistor,

1242GB120-407CTVF Parametric

Parameter NameAttribute value
Objectid102778225
package instruction,
Reach Compliance CodeCompliant
ECCN codeEAR99
Is SamacsysN
SKiiP 1242 GB 120 - 407 CTV
Absolute Maximum Ratings
Symbol
V
isol
T
op
,T
stg
4)
Conditions
1)
Values
3000
-25...+85
1200
900
1200
-40...+150
1200
2400
8640
373
18
30
14
75
Units
V
°C
V
V
A
°C
A
A
A
2
kAs
V
V
kHz
kV/µs
AC, 1min
Operating / stor. temperature
IGBT and Inverse Diode
V
CES
5)
V
CC
Operating DC link voltage
I
C
IGBT
3)
T
j
IGBT + Diode
I
F
Diode
I
FM
Diode, t
p
< 1 ms
I
FSM
Diode, T
j
= 150 °C, 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
Driver
V
S1
Stabilized Power Supply
V
S2
Non-stabilized Power Supply
f
smax
Switching frequency
dV/dt
Primary to secondary side
SKiiPPACK
®
SK integrated intelligent
Power PACK
halfbridge
SKiiP
7,9)
1242 GB 120 - 407 CTV
Preliminary Data
Case S4
Characteristics
Symbol
11)
IGBT
V
(BR)CES
I
CES
V
TO
r
T
V
Cesat
V
Cesat
E
on
+ E
off
C
CHC
L
CE
Conditions
1)
min.
≥V
CES
typ.
60
5,6
4
0,91
1,0
max.
1,8
1,38
1,8
3,2
3,05
360/586
2,43
2,55
48
0,023
0,063
0,033
Units
V
mA
mA
V
mΩ
V
V
mJ
nF
nH
V
V
mJ
V
mΩ
°C/W
°C/W
°C/W
mA
mA
µs
A
A
°C
V
Driver without supply
V
GE
= 0,
T
j
= 25 °C
T
j
= 125 °C
V
CE
= V
CES
T
j
= 125 °C
T
j
= 125 °C
I
C
= 1000A,
T
j
= 125 °C
I
C
= 1000A,
T
j
= 25 °C
V
CC
=600/900V,I
C
=1200A
T
j
= 125 °C
per SkiiP, AC side
Top, Bottom
2)
Inverse Diode
V
F
= V
EC
I
F
= 1000A;
V
F
= V
EC
I
F
= 1000A;
E
on
+ E
off
I
F
= 1200A;
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
Features
Short circuit protection, due to
evaluation of current sensor
signals
Isolated power supply
Low thermal impedance
Optimal thermal management
with integrated heatsink
Pressure contact technology
with increased power cycling
capability, compact design
Low stray inductance
High power, small losses
Over-temperature protection
1)
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
2)
3)
4)
Thermal Characteristics
10)
R
thjs
per IGBT
10)
R
thjs
per Diode
6,10)
R
thsa
P16 heatsink; see case S4
Driver
I
S1
Supply current 15V-supply
I
S2
Supply current 24V-supply
t
interlock-driver
Interlock-time
SKiiPPACK protection
I
TRIPSC
Short circuit protection
I
TRIPLG
Ground fault protection
T
TRIP
Over-temp. protection
9)
U
DCTRIP
U
DC
-protection
Mechanical Data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
©by
SEMIKRON
5)
6)
7)
290+580*f
s
/f
smax
+1,3*I
AC
/A
220+420*f
s
/f
smax
+1,0*I
AC
/A
3,3
1500
±
2%
-
115
±
5%
920
±
2%
4
8
28.01.99
6
10
8)
9)
10)
11)
Nm
Nm
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast)
without driver
Driver input to DC link/ AC
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
AC connection busbars must be
connected by the user; copper
busbars available on request
options available for driver:
U - DC link voltage sense
F – Fiber optic connector
s
” referenced to temperature
sensor
NPT-technology with homo-
genous current-distribution
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