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1N5441A

Description
Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size54KB,1 Pages
ManufacturerCRYSTALONICS Inc.
Download Datasheet Parametric View All

1N5441A Overview

Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2

1N5441A Parametric

Parameter NameAttribute value
Reach Compliance CodeUnknown
Is SamacsysN
YTEOL0
Objectid1722478967
Parts packaging codeDO-7
package instructionO-LALF-W2
Contacts2
ECCN codeEAR99
Number of components1
Maximum repetitive peak reverse voltage30 V
surface mountNO
Minimum breakdown voltage30 V
Nominal diode capacitance6.8 pF
Diode typeVARIABLE CAPACITANCE DIODE
Maximum power dissipation0.4 W
ConfigurationSINGLE
Diode component materialsSILICON
Terminal locationAXIAL
Shell connectionISOLATED
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Terminal formWIRE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.5
minimum quality factor450
Varactor Diode ClassificationABRUPT
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Certification statusNot Qualified
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