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CY7C1370KV33-167AXIT

Description
SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 100-TQFP(14x20)
Categorysemiconductor    memory   
File Size786KB,32 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY7C1370KV33-167AXIT Overview

SRAM - 同步,SDR 存储器 IC 18Mb(512K x 36) 并联 167 MHz 3.4 ns 100-TQFP(14x20)

CY7C1370KV33-167AXIT Parametric

Parameter NameAttribute value
category
MakerCypress Semiconductor
seriesNoBL™
PackageTape and Reel (TR)
memory typeVolatile
memory formatSRAM
technologySRAM - 同步,SDR
storage18Mb(512K x 36)
memory interfacein parallel
Write cycle time - words, pages-
Voltage - Power supply3.135V ~ 3.6V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount type
Package/casing100-LQFP
Supplier device packaging100-TQFP(14x20)
Clock frequency167 MHz
interview time3.4 ns
Basic product numberCY7C1370
CY7C1370KV33/CY7C1370KVE33
CY7C1372KV33/CY7C1372KVE33
18-Mbit (512K × 36/1M × 18) Pipelined SRAM
with NoBL™ Architecture (With ECC)
18-Mbit (512K × 36/1M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)
Features
Functional Description
The CY7C1370KV33/CY7C1370KVE33/CY7C1372KV33/
CY7C1372KVE33 are 3.3 V, 512K × 36 and 1M × 18
synchronous pipelined burst SRAMs with No Bus Latency™
(NoBL logic, respectively. They are designed to support
unlimited true back-to-back read/write operations with no wait
states. The CY7C1370KV33/CY7C1370KVE33/
CY7C1372KV33/CY7C1372KVE33 are equipped with the
advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1370KV33/CY7C1370KVE33/CY7C1372KV33/
CY7C1372KVE33 are pin compatible and functionally equivalent
to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the byte write selects (BW
a
BW
d
for CY7C1370KV33/CY7C1370KVE33 and BW
a
–BW
b
for
CY7C1372KV33/CY7C1372KVE33) and a write enable (WE)
input. All writes are conducted with on-chip synchronous
self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tristated during
the data portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
3.3 V core power supply (V
DD
)
3.3 V/2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.5 ns (for 250 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free
165-ball FBGA package
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
On chip Error Correction Code (ECC) to reduce Soft Error Rate
(SER)
Selection Guide
Description
Maximum access time
Maximum operating current
× 18
× 36
250 MHz
2.5
180
200
200 MHz
3.0
158
178
167 MHz
3.4
143
163
Unit
ns
mA
Cypress Semiconductor Corporation
Document Number: 001-97836 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 19, 2017

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